Abstract:The difficulty in the fabrication of p-type ZnO hinders the development of ZnO-based devices. Group-Ⅰand group-Ⅴ elements substituting for Zn and O can respectively form the different acceptor dopants. Park C H calculated the energy levels of different acceptor dopants in ZnO, and it is found that group-Ⅰ elements substituting for Zn are of a shallower acceptor level than group-V elements substituting for O. Especially the acceptor level of Li substituting for Zn (Li_ Zn ) is 0.09 eV, which is the shallowest value among the energy levels of acceptor dopants in ZnO reported. However, when Li atom substitutes for Zn, it will easily be accompanied by the formation of interstitial Li (Li_i), which is likely to be shallow donor. This causes the p-type doping to be limited by the formation of a Li_ Zn -Li_i complex donor. Based on above, Li was used as the acceptor dopant substituting for Zn in this work. In order to repress the formation of Li_i, nitrogen was used as a codopant with lithium by a two step annealing process to form Li_ Zn -N complex acceptor. The electrical and photoluminescence (PL) characteristics of p-type ZnO∶Li are discussed. As compa- rison , the electrical and photoluminescence (PL) characteristics of the undoped ZnO grown under the same condition were also measured. By the measurement of Hall effect, it is shown that the room-temperature p-type ZnO∶Li resistivity is of 678.34 Ω·cm with a Hall mobility of 1.03 cm~2·V~ -1 · s~ -1 and a carrier concentration of 8.934×10~ 15 cm~ -3 . By the measurement of room-temperature photoluminescence (PL), it is found that the near band-edge PL peak of p-type ZnO∶Li shift to the lower energy by 23 meV than that of the undoped ZnO. By the measurement of low-temperature (12 K) photoluminescence (PL), the optical level of the Li_ Zn -N complex acceptor is estimated to be about 137 meV.

Low-resistivity, Stable P-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method

Preparation and Characterization of p-Type ZnO Using Li-N Dual-Acceptor Doping Method by Pulsed Laser Deposition

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Realization of p-type ZnO films via monodoping of Li acceptor

Fabrication of P-Type Li-Doped Zno Films by Pulsed Laser Deposition

Dopant Source Choice for Formation of P-Type ZnO: Li Acceptor

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

Acceptor Formation Mechanisms Determination from Electrical and Optical Properties of P-Type ZnO Doped with Lithium and Nitrogen

Effects of growth temperature on Li–N dual-doped p-type ZnO thin films prepared by pulsed laser deposition

P -Type Conduction in N–Al Co-Doped ZnO Thin Films

Fabrication of P-Type ZnMgO Films Via Pulsed Laser Deposition Method by Using Li As Dopant Source

p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p–n homojunctions

Preparation and Characteristic of P-Type ZnO Films by Al–N Codoping Technique

Control of P- and N-Type Conductivities in Li-Doped Zno Thin Films

A Facile Route to Realize P-Type ZnO Thin Films Via Li–F Codoping: Experiments and Theory

High Quality P-Type Zno Films Grown by Low Pressure Plasma-Assisted Mocvd with N2o Rf Plasma Doping Source

p-Type conduction in Al–N co-doped ZnO films

P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

Preparation and Properties of N-Doped P-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the C -Axis Parallel to the Substrate

Revert stable p-type ZnO with LimN complex co-doping from the first-principles study

Electrical and Optical Characteristics of Li-doped ZnO