Abstract:The difficulty in the fabrication of p-type ZnO hinders the development of ZnO-based devices. Group-Ⅰand group-Ⅴ elements substituting for Zn and O can respectively form the different acceptor dopants. Park C H calculated the energy levels of different acceptor dopants in ZnO, and it is found that group-Ⅰ elements substituting for Zn are of a shallower acceptor level than group-V elements substituting for O. Especially the acceptor level of Li substituting for Zn (Li_ Zn ) is 0.09 eV, which is the shallowest value among the energy levels of acceptor dopants in ZnO reported. However, when Li atom substitutes for Zn, it will easily be accompanied by the formation of interstitial Li (Li_i), which is likely to be shallow donor. This causes the p-type doping to be limited by the formation of a Li_ Zn -Li_i complex donor. Based on above, Li was used as the acceptor dopant substituting for Zn in this work. In order to repress the formation of Li_i, nitrogen was used as a codopant with lithium by a two step annealing process to form Li_ Zn -N complex acceptor. The electrical and photoluminescence (PL) characteristics of p-type ZnO∶Li are discussed. As compa- rison , the electrical and photoluminescence (PL) characteristics of the undoped ZnO grown under the same condition were also measured. By the measurement of Hall effect, it is shown that the room-temperature p-type ZnO∶Li resistivity is of 678.34 Ω·cm with a Hall mobility of 1.03 cm~2·V~ -1 · s~ -1 and a carrier concentration of 8.934×10~ 15 cm~ -3 . By the measurement of room-temperature photoluminescence (PL), it is found that the near band-edge PL peak of p-type ZnO∶Li shift to the lower energy by 23 meV than that of the undoped ZnO. By the measurement of low-temperature (12 K) photoluminescence (PL), the optical level of the Li_ Zn -N complex acceptor is estimated to be about 137 meV.

Acceptor Formation Mechanisms Determination from Electrical and Optical Properties of P-Type ZnO Doped with Lithium and Nitrogen

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Optical properties of p-type ZnO doped by lithium and nitrogen

Identification of Acceptor States in Li-N Dual-Doped P-Type Zno Thin Films

Investigation On The Formation Mechanism Of P-Type Li-N Dual-Doped Zno

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Electrical and Optical Characteristics of Li-doped ZnO

Preparation and Characterization of p-Type ZnO Using Li-N Dual-Acceptor Doping Method by Pulsed Laser Deposition

The mechanism of Li, N dual-acceptor co-doped p-type ZnO

Identification of Acceptor States in Li-Doped P-Type Zno Thin Films

The Mechanism of Formation and Properties of Li-doped P-Type ZnO Grown by a Two-Step Heat Treatment

Low-resistivity, Stable P-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method

Dopant Source Choice for Formation of P-Type ZnO: Li Acceptor

Dual-acceptor P-Type Behaviour in ZnO Films Grown by Plasma-Assisted Metalorganic Chemical Vapour Deposition

Effects of (P, N) Dual Acceptor Doping on Band Gap and P-Type Conduction Behavior of ZnO Films

Fabrication and Characterization of P–N Dual Acceptor Doped P-Type ZnO Thin Films

P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

Growth Ambient Dependent Electrical Properties of Lithium and Nitrogen Dual-Doped Zno Films Prepared by Radio-Frequency Magnetron Sputtering

P-Type Conductivity In N-Doped Zno: The Role Of The N-Zn-V-O Complex

Synthesis and Properties of P-Type Nitrogen-Doped ZnO Thin Films by Pulsed Laser Ablation of a Zn-rich Zn3N2 Target

The Formation Mechanism and Stability of P-Type N-doped Zn-rich ZnO Films