Abstract:N-doped, p-type ZnO ( ZnO : N) thin films were prepared by magnetron sputtering using NO as the N-doping source. The introduction of Ar in the growth ambient could evidently improve the p-type conductivity and crystal quality of the ZnO : N films, with the lowest room-temperature resistivity of 3.51 Omega cm obtained at an optimal Ar partial pressure of 30%. The p-type ZnO : N films have high optical quality, as suggested by temperature-dependent photoluminescence spectra. The N-O substitution acceptor state with an energy level of 180 meV was identified from the free-to-neutral-acceptor ( e, A(0)) transition. The N-O-acceptor bound-exciton binding energy was derived to be 17 meV from the neutral-acceptor-bound- exciton and free exciton emissions. The Haynes factor was about 0.094 for the N-O acceptor in ZnO. Besides the N-O acceptor, a zinc vacancy ( V-Zn) acceptor state with an energy level of 255 meV was also identified in ZnO : N from the ( e, A(0)) transition, which might also contribute to the observed p-type conductivity.

Dual-acceptor P-Type Behaviour in ZnO Films Grown by Plasma-Assisted Metalorganic Chemical Vapour Deposition

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

P-Type Behavior in Nominally Undoped Zno Thin Films by Oxygen Plasma Growth

Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films

Acceptor Formation Mechanisms Determination from Electrical and Optical Properties of P-Type ZnO Doped with Lithium and Nitrogen

P-Type Behavior in Na-doped ZnO Films and ZnO Homojunction Light-Emitting Diodes

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

Preparation and Properties of N-Doped P-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the C -Axis Parallel to the Substrate

Preparation and Characterization of p-Type ZnO Using Li-N Dual-Acceptor Doping Method by Pulsed Laser Deposition

Identification of Acceptor States in Li-N Dual-Doped P-Type Zno Thin Films

Realization of P-Type Non-Polar A-Plane Zno Films Via Doping of Na Acceptor

p-Type conduction in Al–N co-doped ZnO films

Low-resistivity, Stable P-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method

P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

Synthesis and Properties of P-Type Nitrogen-Doped ZnO Thin Films by Pulsed Laser Ablation of a Zn-rich Zn3N2 Target

P-Type Behavior in In–N Codoped ZnO Thin Films

Dopant Source Choice for Formation of P-Type ZnO: Li Acceptor

Investigation on Na Acceptor Level in P -Type Na-Doped ZnMgO Thin Films Prepared by Pulsed Laser Deposition

Growth Ambient Dependent Electrical Properties of Lithium and Nitrogen Dual-Doped Zno Films Prepared by Radio-Frequency Magnetron Sputtering

P -Type Conduction in N–Al Co-Doped ZnO Thin Films