Abstract:Over the past two decades, there have been numerous reports about the p-type behavior of N-doped ZnO. To date, however, its origin still remains mysterious, especially, N ion-implanted ZnO system. Herein, ZnO films were implanted with 70 keV N ions to a fluence of 1 × 1017 cm−2 at room temperature, followed by annealing in the range of 750–950 °C. The obtained p-type ZnO films have a widely hole concentration of 2.87 × 1015 ~ 2.64 × 1016 cm−3, a mobility of 1.37 ~ 7.27 cm2V-1s−1 and a resistivity of 148.3 ~ 299.4 Ω.cm. The thermal evolution of point defects and the possible shallow acceptors in N-implanted ZnO films were further investigated by means of Raman scattering, Photoluminescence (PL) and Electron paramagnetic resonance (EPR). The results show that abundant intrinsic-related defects including zinc interstitials (Zni), oxygen vacancies (VO) and zinc vacancies (VZn) were introduced during ion implantation. It is demonstrated that appropriate post-annealing can not only reduce the compensation of donor defects, but also facilitate the formation of N-related shallow acceptor complexes, both of which contribute to the p-type conduction transition of N-implanted ZnO films. The non-axial NO-VZn complexes are proposed to be a kind of potential and stable acceptors in N ion-implanted ZnO films.

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Low-resistivity, Stable P-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method

Properties of N-doped ZnO thin films in annealing process

p-Type conduction in Al–N co-doped ZnO films

Identification of Acceptor States in Li-N Dual-Doped P-Type Zno Thin Films

P -Type Conduction in N–Al Co-Doped ZnO Thin Films

Synthesis and Properties of P-Type Nitrogen-Doped ZnO Thin Films by Pulsed Laser Ablation of a Zn-rich Zn3N2 Target

Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films

Dual-acceptor P-Type Behaviour in ZnO Films Grown by Plasma-Assisted Metalorganic Chemical Vapour Deposition

Acceptor Formation Mechanisms Determination from Electrical and Optical Properties of P-Type ZnO Doped with Lithium and Nitrogen

Non-axial NO-VZn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films

Optical properties of p-type ZnO doped by lithium and nitrogen

High Temperature Dehydrogenation for Realization of Nitrogen-Doped P-Type ZnO

P-Type Behavior in Na-doped ZnO Films and ZnO Homojunction Light-Emitting Diodes

Electrical and Optical Properties of Al–N Co-Doped P-Type Zinc Oxide Films

P-Type Behavior in Nominally Undoped Zno Thin Films by Oxygen Plasma Growth

Preparation and Characterization of p-Type ZnO Using Li-N Dual-Acceptor Doping Method by Pulsed Laser Deposition

Effect of Oxygen Partial Pressure Ratios on the Properties of Al–N Co-Doped ZnO Thin Films

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering