Electrical and Optical Properties of Al–N Co-Doped P-Type Zinc Oxide Films

F Zhuge,ZZ Ye,LP Zhu,JG Lu,BH Zhao,JY Huang,ZH Zhang,L Wang,ZG Ji
DOI: https://doi.org/10.1016/j.jcrysgro.2004.05.008
IF: 1.8
2004-01-01
Journal of Crystal Growth
Abstract:Al–N co-doped p-type ZnO thin films have been grown in N2O–O2 atmosphere. Types of conduction, carrier density and mobility in as-grown films were found to be dependent on N2O partial pressure ratios. The highest hole density was found to be 8×1017cm−3, with the lowest carrier mobility of 0.1cm2V−1s−1 and the best crystallinity for the films deposited in pure N2O ambient. Results show that it’s difficult to achieve p-ZnO with both high hole concentration and high mobility by co-doping, most likely due to the inherent defects of the AlN precipitates produced in co-doping process. As-grown ZnO films show good transparency of about 90% in the visible range. A decrease in optical band gap for co-doped p-type ZnO was observed.
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