Abstract:Physical properties of ZnO thin films are of great importance for their potential application. In this paper, we reported the electrical and optical properties of undoped ZnO films with a high dependence oil the nucleation and growth kinetics. These ZnO films were deposited on glass substrates within the temperature range of 250-350 degrees C by pulsed-spray evaporation chemical vapor deposition (PSE-CVD). X-ray diffraction (XRD) shows that ZnO films grow in the c-axis orientated hexagonal structure. The inspection of the surface morphology with scanning electron micrographs (SEM) shows a substantial effect of the growth temperature, which was directly correlated with the nucleation kinetics. A comprehensive nucleation and growth process was also proposed for the interpretation of changeable film morphology and corresponding electrical conductivity. The films deposited at intermediate growth temperatures of 310-340 degrees C show compact structures and consequent high electrical conductivity, Which Was Still improved with increase of film thickness. Ill contrast to the electrical conductivity, the optical hand gal) rather shows a correlation with the size of the crystals forming the films rather than with their arrangement. The band gap energy decreases from 3.56 to 3.42 eV toward the bulk value Upon the increase of the crystallite size from 15 to 30 nm.

Electrical Properties of Al+N Co-doped p-type ZnO Films

Electrical and Optical Properties of Al–N Co-Doped P-Type Zinc Oxide Films

Effect of Nucleation and Growth Kinetics on the Electrical and Optical Properties of Undoped ZnO Films

Effects of Growth Ambient on Electrical Properties of Al–N Co-Doped P-Type ZnO Films

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Growth and Characteristics of p-Type ZnO Films Doped with Al and N

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

p-Type conduction in Al–N co-doped ZnO films

Structural, electrical and optical properties of N-doped ZnO films synthesized by SS-CVD

Effect of Oxygen Partial Pressure Ratios on the Properties of Al–N Co-Doped ZnO Thin Films

P -Type Conduction in N–Al Co-Doped ZnO Thin Films

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Preparation of P-Type ZnO Films by Al+N-codoping Method

Al–N codoping and p-type conductivity in ZnO using different nitrogen sources

Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering

Effect of Substrate Temperature on Structural, Electrical and Optical Properties of Al-N Co-Doped Zno Thin Films

Preparation and Characteristic of P-Type ZnO Films by Al–N Codoping Technique

Growth and Electric Characteristics of p-Type N-Doped ZnO Film by Metal-Organic Chemical Vapor Deposition

Deposition of Al-N Co-Doped P-Type Zn0.95Mg0.05O Thin Films

Preparation and Properties of N-Doped P-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the C -Axis Parallel to the Substrate

Dependence of properties of N?Al codoped p-type ZnO thin films on growth temperature