Abstract:Physical properties of ZnO thin films are of great importance for their potential application. In this paper, we reported the electrical and optical properties of undoped ZnO films with a high dependence oil the nucleation and growth kinetics. These ZnO films were deposited on glass substrates within the temperature range of 250-350 degrees C by pulsed-spray evaporation chemical vapor deposition (PSE-CVD). X-ray diffraction (XRD) shows that ZnO films grow in the c-axis orientated hexagonal structure. The inspection of the surface morphology with scanning electron micrographs (SEM) shows a substantial effect of the growth temperature, which was directly correlated with the nucleation kinetics. A comprehensive nucleation and growth process was also proposed for the interpretation of changeable film morphology and corresponding electrical conductivity. The films deposited at intermediate growth temperatures of 310-340 degrees C show compact structures and consequent high electrical conductivity, Which Was Still improved with increase of film thickness. Ill contrast to the electrical conductivity, the optical hand gal) rather shows a correlation with the size of the crystals forming the films rather than with their arrangement. The band gap energy decreases from 3.56 to 3.42 eV toward the bulk value Upon the increase of the crystallite size from 15 to 30 nm.

Growth and Electric Characteristics of p-Type N-Doped ZnO Film by Metal-Organic Chemical Vapor Deposition

Effect of Nucleation and Growth Kinetics on the Electrical and Optical Properties of Undoped ZnO Films

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Structural, electrical and optical properties of N-doped ZnO films synthesized by SS-CVD

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Growth and Characteristics of p-Type ZnO Films Doped with Al and N

Effects of Growth Ambient on Electrical Properties of Al–N Co-Doped P-Type ZnO Films

Preparation and Properties of N-Doped P-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the C -Axis Parallel to the Substrate

Growth of Phosphorus-Doped P-Type ZnO Thin Films by MOCVD

Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films

Low‐Temperature Growth of P‐type ZnO Thin Films Via Plasma‐Assisted MOCVD

Low-Pressure Mocvd Growth of P-Type Zno Thin Films by Using No As the Dopant Source

Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering

P-Type Behavior in Nominally Undoped Zno Thin Films by Oxygen Plasma Growth

Temperature Effect on the Electrical, Structural and Optical Properties of N-Doped Zno Films by Plasma-Free Metal Organic Chemical Vapor Deposition

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

Electrical Properties of Al+N Co-doped p-type ZnO Films

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition

Effects of growth temperature on Li–N dual-doped p-type ZnO thin films prepared by pulsed laser deposition

Electrical and Optical Properties of Al–N Co-Doped P-Type Zinc Oxide Films