Abstract:An atmospheric pressure mist chemical vapor deposition (mist-CVD) system has been developed to prepare zinc oxide (ZnO)-based thin films. This is a promising method for large-area deposition at low temperatures taking into account of its simplicity, inexpensiveness, and safety. Nominally pure ZnO, Al-doped n-type ZnO (ZnO:Al), and N-doped p-type ZnO (ZnO:N) thin films, as well as Zn1−xCdxO and Zn1−yMgyO alloy films, have been deposited by this mist-CVD system. The films deposited at the temperatures ranging from 400 to 500°C were of an acceptable crystallinity with (002) preferential orientation and homogeneous surface. All the films exhibited high transmittance of about 90% in visible regions and dominant UV emission in the photoluminescence spectra. The n-type ZnO:Al films had a low resistivity of 1.08×10–3Ωcm at an optimal Al content of 4at%. The p-type conductivity was obtained in ZnO:N films annealed at higher temperatures with a resistivity of 72.8Ωcm, Hall mobility of 2.28cm2V−1s−1, and hole concentration of 3.76×1016cm−3, as confirmed by Hall-effect measurements. A hydrogen-assisted nitrogen-doping mechanism was proposed to answer for the realization of p-type conductivity in ZnO. The films of Zn1−xCdxO and Zn1−yMgyO ternary alloys were also deposited by this technique. The band gap energies, for instance, were 3.05eV for Zn1−xCdxO (x=0.06), 3.28eV for ZnO, and 3.56eV for Zn1−yMgyO (y=0.11), as confirmed by the optical absorption spectra. The band gap engineering could be readily realized in the ZnO system using mist-CVD.

Low-Pressure Mocvd Growth of P-Type Zno Thin Films by Using No As the Dopant Source

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Zno-based Thin Films Synthesized by Atmospheric Pressure Mist Chemical Vapor Deposition

Junction Properties of Nitrogen-Doped Zno Thin Films

High Quality P-Type Zno Films Grown by Low Pressure Plasma-Assisted Mocvd with N2o Rf Plasma Doping Source

Growth and Electric Characteristics of p-Type N-Doped ZnO Film by Metal-Organic Chemical Vapor Deposition

High Quality P-Type Zno Film Growth by A Simple Method and Its Properties

Mocvd Growth and Properties of Zno Films Using Dimethylzinc and Oxygen

Low‐Temperature Growth of P‐type ZnO Thin Films Via Plasma‐Assisted MOCVD

P-Type Behavior in Nominally Undoped Zno Thin Films by Oxygen Plasma Growth

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

Electrical And Structural Properties Of P-Type Zno : N Thin Films Prepared By Plasma Enhanced Chemical Vapour Deposition

Preparation and Properties of N-Doped P-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the C -Axis Parallel to the Substrate

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

High Temperature Dehydrogenation for Realization of Nitrogen-Doped P-Type ZnO

Properties of N-doped ZnO thin films in annealing process

Effect of Oxygen Partial Pressure Ratios on the Properties of Al–N Co-Doped ZnO Thin Films

Formation of p-type ZnMgO thin films by In–N codoping method

Growth of Phosphorus-Doped P-Type ZnO Thin Films by MOCVD

Growth and Characteristics of p-Type ZnO Films Doped with Al and N