Abstract:Low-temperature epitaxy of ZnO films was carried out on both Si(00 1) and silica substrates by reactive e-beam evaporation. Growth temperature was varied between 100 degrees C and 450 degrees C. The optimal growth temperatures were between 200 degrees C and 300 degrees C for Si(00 1) substrates and 300 degrees C and 350 degrees C for silica, respectively. Structural and optical characteristics grown on both of Si and silica were compared by measurements of X-ray diffraction, Raman scattering and photoluminescence excitation (PLE) spectroscopy. X-ray diffraction showed the ZnO films grown both on Si(00 1) and silica substrates were all highly c-axis-oriented and their linewidth of (002) diffraction peak is significantly smaller than that measured from ZnO films deposited by magnetron sputtering. However, Raman scattering demonstrated the presence of excess zinc in the ZnO/silica structure. PLE measurements exhibited the sharp band-absorption edge and exciton absorption in the ZnO films on Si(00 1) and poor optical properties of ZnO on silica. PLE also revealed that the absorption characteristic near the band edge remarkably changed with the variation of oxygen content in the ZnO lattice while X-ray diffraction showed that the crystalline structures of ZnO films grown under different O-2 pressure almost remained unchanged. The underlying mechanism of low-temperature epitaxy of high-quality ZnO films and its applications in electronic and optoelectronic devices are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

Low‐Temperature Growth of P‐type ZnO Thin Films Via Plasma‐Assisted MOCVD

Effect of Nucleation and Growth Kinetics on the Electrical and Optical Properties of Undoped ZnO Films

The growth of nanoscale ZnO films by pulsed-spray evaporation chemical vapor deposition and their structural, electric and optical properties

STRUCTURAL AND OPTICAL STUDIES OF ZnO FILMS GROWN AT LOW TEMPERATURE

Comparison of Structural and Optical Properties of ZnO Films Grown on Different Substrates at Low Temperatures

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Growth and Electric Characteristics of p-Type N-Doped ZnO Film by Metal-Organic Chemical Vapor Deposition

Growth of Phosphorus-Doped P-Type ZnO Thin Films by MOCVD

Low-temperature epitaxy of ZnO films on Si(0 0 1) and silica by reactive e-beam evaporation

Low-temperature MOVPE Growth of ZnO Thin Films by Using a Buffer Layer

Temperature Effect on the Electrical, Structural and Optical Properties of N-Doped Zno Films by Plasma-Free Metal Organic Chemical Vapor Deposition

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Low-Pressure Mocvd Growth of P-Type Zno Thin Films by Using No As the Dopant Source

Growth of ZnO Film by Plasma-assisted MOCVD

Effects of RF power variation on properties of N-doped p-type ZnO thin films grown by plasma-assisted MOCVD

Low-Temperature C-Axis Oriented Growth of Nanocrystalline Zno Thin Films on Si Substrates by Plasma Assisted Pulsed Laser Deposition

Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films

Characteristics of Zno Film Grown by Mocvd

Effects of growth temperature on Li–N dual-doped p-type ZnO thin films prepared by pulsed laser deposition

Epitaxial growth of non-polar m-plane ZnO thin films by pulsed laser deposition

P-Type Behavior in Nominally Undoped Zno Thin Films by Oxygen Plasma Growth