Temperature Effect on the Electrical, Structural and Optical Properties of N-Doped Zno Films by Plasma-Free Metal Organic Chemical Vapor Deposition

Ying Zhu,Shisheng Lin,Yinzhu Zhang,Zhizhen Ye,Yangfan Lu,Jianguo Lu,Binghui Zhao
DOI: https://doi.org/10.1016/j.apsusc.2009.01.077
IF: 6.7
2009-01-01
Applied Surface Science
Abstract:N-doped p-type ZnO films were grown by plasma-free metal-organic chemical vapor deposition (MOCVD). The effect of substrate temperature on the electrical, optical, and structural properties of the N-doped ZnO films was investigated by Hall-effect, photoluminescence, X-ray diffraction measurements. The electrical properties of the films were extremely sensitive to the substrate temperature and the conduction type could be reversed in a narrow range from 380°C to 420°C. Based on X-ray photoelectron spectroscopy, a high compensation effect in the N-doped ZnO films grown by plasma-free MOCVD was suggested to explain the temperature-dependent phenomenon.
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