Nb-Doped Zno Transparent Conducting Films Fabricated by Pulsed Laser Deposition

J. M. Lin,Y. Z. Zhang,Z. Z. Ye,X. Q. Gu,X. H. Pan,Y. F. Yang,J. G. Lu,H. P. He,B. H. Zhao
DOI: https://doi.org/10.1016/j.apsusc.2009.01.002
IF: 6.7
2009-01-01
Applied Surface Science
Abstract:Nb-doped ZnO thin films have been prepared on glass substrates by pulsed laser deposition (PLD). The effect of substrate temperature has been investigated from 100 to 500°C by analyzing the structural, optical, and electrical properties. The Nb-doped ZnO films possessed a good crystallinity with a c-axis preferential orientation and a high transmittance (above 85%) in the visible region. The obtained film deposited at 350°C exhibited the best electrical properties with the lowest room-temperature resistivity of around 5×10−4Ωcm. Guided by x-ray photoemission spectroscopy analysis, NbZn3+ is believed to be the very possible donor in the Nb-doped ZnO films.
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