Transparent conductive F-doped SnO 2 films prepared by RF reactive magnetron sputtering at low substrate temperature
B. L. Zhu,Y. T. Yang,W. C. Hu,J. Wu,Z. H. Gan,J. Liu,D. W. Zeng,C. S. Xie
DOI: https://doi.org/10.1007/s00339-017-0871-z
2017-01-01
Abstract:To obtain highly transparent conductive F-doped SnO 2 films by magnetron sputtering at low substrate temperatures, a new method of sputtering high-density SnF 2 –Sn target in Ar + O 2 atmosphere was adopted in the present study. The structural, electrical, and optical properties of the films prepared were investigated as a function of O 2 flux. The results indicate that the films shows SnO 2 phase only at O 2 flux above a critical value (0.8 sccm), and the crystallinity of SnO 2 phase is improved with increasing O 2 flux. The resistivity of the films steeply decreases once O 2 flux is above the critical value, but it greatly increases as O 2 flux is too high. Only in intermediate range of O 2 flux, the films with low resistivity can be obtained. As O 2 flux is above the critical value, both the transmittances in visible light range and E g of the films show steeply increase, and the PL spectra of the film show distinct emission characteristics. Furthermore, the position and intensity of PL emission peaks are similar when O 2 flux is above the critical value, and the emission mechanism can be attributed to electron transitions mediated by defect levels in the bandgap, such as V O and F O . Just because of formation of SnO 2 phase in the films and existence of relatively larger amount of V O and F O , the films show low resistivity and high transmittance at suitable O 2 fluxes.