Effect of Process Conditions on the Transparent Conductive Properties Ga-Doped Thin Films

WU Mu-ying,LIU Min-xia,LI Hong-tao,YANG Lei,ZHANG Wei-feng
DOI: https://doi.org/10.3969/j.issn.1003-4978.2012.06.007
2012-01-01
Abstract:In this paper,Ga-doped zinc oxide(GZO) conductive ceramics were prepared by high temperature solid state reaction method and the process conditions(presinter temperature,sinter temperature and Ga-doping level) were investigated.Transparent conducting GZO thin films were prepared on glass and quartz substrates by magnetron sputtering respectively.The electrical resistivity and optical transparency of the GZO films have been investigated as a function of substrate deposition temperature,oxygen partial pressures and different annealing temperatures in nitrogen ambience.Experimental results show that GZO film with a low resistivity of approximately 8.4×10-5 Ω·cm and a visible light transitivity of greater than 90 % can be obtained using substrate deposition temperature of 450 ℃,Ga-doped level of 2 % and thermal annealing temperature of 700 ℃.The value of optical band gap of GZO increased with the rise of the annealing temperatures of the GZO thin film.
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