Abstract:CdO-Ga 2 O 3 alloy films (Cd 1-x Ga x O 1+δ ) over the whole composition range (x=0 to 1) were synthesized by room temperature radio frequency magnetron sputtering. We found that the intrinsic band gap of these alloys can be tuned in a wide range from 2.2 to 4.8 eV. As the Ga content increases to x>0.3 the alloy becomes entirely amorphous and the resistivity increases from 10 -3 to 10 -1 ohm-cm while the mobility decreases gradually from 15 (x=0.34) to 10 cm 2 /Vs (x=0.6). The resistivity of amorphous Cd 1-x Ga x O 1+δ films can be further controlled from 10 -3 to 10 2 ohm-cm by oxygen doping. Moreover, alloy films grown on plastic (PEN) substrate exhibit similar electrical and optical properties. These results suggest that amorphous Cd 1-x Ga x O 1+δ alloy films can potentially be used as highly conducting transparent conductors on flexible solar cells as well as gate electrodes with a wide bandgap tunabilty for transparent/flexible devices.

Transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering at low temperature

Low Resistivity Transparent Conducting CdO Thin Films Deposited by DC Reactive Magnetron Sputtering at Room Temperature

Substrate Temperature Dependence of the Properties of Ga-doped ZnO Films Deposited by DC Reactive Magnetron Sputtering

Highly Near-Infrared Reflecting and Transparent Conducting ZnO : Ga Films: Substrate Temperature Effect

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Transparent conducting amorphous CdO-Ga<inf>2</inf>O<inf>3</inf> films synthesized by room temperature sputtering

Transparent conducting amorphous CdO-Ga 2 O 3 films synthesized by room temperature sputtering

Effects of substrate temperature on the properties of heavy Ga-doped ZnO transparent conductive film by RF magnetron sputtering

Optimization of parameters for deposition of Ga-doped ZnO films by DC reactive magnetron sputtering using Taguchi method

Highly infrared reflective behavior of transparent conductive ZnO:Ga films synthesized by DC reactive magnetron sputtering.

Transparent and conductive Ga-doped ZnO films grown by RF magnetron sputtering on polycarbonate substrates

Effects of Deposition Pressure on the Properties of Transparent Conductive Zno : Ga Films Prepared by Dc Reactive Magnetron Sputtering

Influence of Sputtering Pressure on the Properties of ZnO:Ga Films Prepared by DC Reactive Magnetron Sputtering

Influence of Annealing Temperature on the Properties of Transparent Conductive and Near-Infrared Reflective Zno : Ga Films

F, Mg and Ga co-doped ZnO transparent conductive thin films by dual-target magnetron sputtering: Fabrication, structure, and characteristics

Ga-concentration-dependent optical and electrical properties of Ga-doped ZnO thin films prepared by low-temperature atomic layer deposition

Study on the Structural, Electrical, Optical, Adhesive Properties and Stability of Ga-Doped Zno Transparent Conductive Films Deposited on Polymer Substrates at Room Temperature

Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited -ZnO Thin Films and Applications in p-i-n -Si:H Thin-Film Solar Cells

Properties of transparent conductive ZnO:Al thin films prepared by magnetron sputtering

High optoelectronic performance of magnetron sputtered ZnO thin films co-doped with F and Ga: Experiment and first-principles calculations

Transparent Conductive and Near-Infrared Reflective Ga-doped ZnO/Cu Bilayer Films Grown at Room Temperature