Abstract:Atmospheric pressure plasma jet (APPJ) has been used to deposit transparent conductive oxides (TCO) in ambient conditions with optoelectronic properties comparable to vacuum-based techniques. However, APPJ-deposited TCO films tend to exhibit a relatively low electrical uniformity, and it is still challenging to improve TCO’s conductivity without compromising the near-infrared (NIR) transmittance. Here, we demonstrate that continuous CO2 laser annealing can simultaneously enhance the electrical conductivity, uniformity, and NIR transmittance of Ga-doped zinc oxides (GZO) prepared by APPJ on 5 × 5 cm2 glasses. GZO films annealed with a laser power of 4.35 W achieve a low resistivity (5.5 × 10−4 Ω cm − 6.0 × 10−4 Ω cm), a high Hall mobility (14.5 cm2 V−1 s−1 − 15.5 cm2 V−1 s−1), a low non-uniformity in resistivity (3% − 5%) and a high transmittance in the visible spectra (>80%, including 10% loss due to the glass substrate). The transmittance in the NIR spectra increases from 52.6% to 61.4% (+16%), and may be further improved by reducing the carrier concentration (6.8 × 1021 cm−3 − 7.6 × 1021 cm−3 in this study). The enhancement may be attributed to the reduction of Ga–O clusters, which act as barrier traps that degrade the carrier mobility. Our findings may also be applied to other scanning-based deposition methods such as spray pyrolysis.

Influence of Sputtering Pressure on the Properties of ZnO:Ga Films Prepared by DC Reactive Magnetron Sputtering

Preparation and Characterization of Transparent Conductive Zno : Ga Films by Dc Reactive Magnetron Sputtering

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

Optimization of parameters for deposition of Ga-doped ZnO films by DC reactive magnetron sputtering using Taguchi method

Substrate Temperature Dependence of the Properties of Ga-doped ZnO Films Deposited by DC Reactive Magnetron Sputtering

Modulation of Optical and Electrical Properties of Sputtering-Derived Amorphous Ingazno Thin Films by Oxygen Partial Pressure

Transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering at low temperature

Highly Near-Infrared Reflecting and Transparent Conducting ZnO : Ga Films: Substrate Temperature Effect

Transparent and conductive Ga-doped ZnO films grown by RF magnetron sputtering on polycarbonate substrates

Improved deposition of ZnO:Ga thin films by sputtering with the chamber pressure

High optoelectronic performance of magnetron sputtered ZnO thin films co-doped with F and Ga: Experiment and first-principles calculations

Effects of Mg Doping on the Properties of Highly Transparent Conductive and Near Infrared Reflective Zn1−xMgxO:Ga Films

Preparation of ZnMgO:Ga Thin Films on Flexible Substrates by Pulsed Laser Deposition

Investigation of the Structural, Electrical, and Optical Properties of the Nano-Scale GZO Thin Films on Glass and Flexible Polyimide Substrates

Effects of Post-Annealing on the Properties of ZnO:Ga Films with High Transparency (94%) and Low Sheet Resistance (29 Ω/square)

Effects of substrate temperature on the properties of heavy Ga-doped ZnO transparent conductive film by RF magnetron sputtering

Physical and Optical Properties of ZnO Thin Films Grown by DC Sputtering Deposition

Effects of Sputtering Pressure on Properties of Al Doped Zno Thin Films Dynamically Deposited by Rf Magnetron Sputtering

Simultaneous enhancement of electrical conductivity, uniformity, and near-infrared transmittance via laser annealing on ZnO:Ga films deposited by atmospheric pressure plasma jet