Preparation of Na Delta-Doped P-Type ZnO Thin Films by Pulsed Laser Deposition Using NaF and ZnO Ceramic Targets

H. B. Liu,X. H. Pan,J. Y. Huang,H. P. He,Z. Z. Ye
DOI: https://doi.org/10.1016/j.tsf.2013.05.133
IF: 2.1
2013-01-01
Thin Solid Films
Abstract:Na δ-doped p-type ZnO thin films were fabricated on quartz substrates with the structure of ZnO/Na (δ-layer) multi-layers by pulsed laser deposition. NaF ceramic target was used as Na source. The effects of oxygen pressure and substrate temperature on the electrical properties of Na δ-doped ZnO thin films are discussed. An optimized result with a resistivity of 29.8 Ω·cm, Hall mobility of 0.263cm2/V·s, and hole concentration of 7.9×1017cm−3 is achieved, and electrically stable over several months. The present work is of interest for developing a method to realize p-type ZnO thin films doping with Na.
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