Realization of Na-doped P-Type Non-Polar A-Plane Zn1−xCdxO Films by Pulsed Laser Deposition

Y. Li,X. H. Pan,J. Jiang,H. P. He,J. Y. Huang,C. L. Ye,Z. Z. Ye
DOI: https://doi.org/10.1016/j.jallcom.2013.09.071
IF: 6.2
2014-01-01
Journal of Alloys and Compounds
Abstract:Na-doped non-polar Zn-1 xCdxO thin films with different Cd content were grown on r-plane sapphire substrates by pulsed laser deposition. The Cd content in the Zn1 xCdxO thin films was adjusted via controlling substrate temperature. Based on the X-ray diffraction analysis, Na-doped Zn1 xCdxO films with Cd content below 5.3 at.% exhibit unique non-polar < 11 (2) over bar0 > orientation, while the films with Cd content above 5.3 at.% present < 0001 > and < 11 (2) over bar0 > mixed orientations. With an effective incorporation of Na, Na-doped non-polar Zn1 xCdxO films exhibit p-type conductivity, as confirmed by rectification behavior of n-ZnO/p-Zn0.947Cd0.053O:Na homojunction. An optimized result with a resistivity of 67.43 Omega cm, Hall mobility of 0.28 cm(2)/V s, and hole concentration of 3.31 x 10(17) cm (3) is achieved, and electrically stable over several months. The chemical states of Na were analyzed by X-ray photoelectron spectro scopy. Room-temperature photoluminescence measurements exhibit redshift of the near-band-edge emission by alloying Cd. (c) 2013 Elsevier B.V. All rights reserved.
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