Carrier Type- and Concentration-Dependent Absorption and Photoluminescence of ZnO Films Doped with Different Na Contents

Z. Zheng,Y. F. Lu,Z. Z. Ye,H. P. He,B. H. Zhao
DOI: https://doi.org/10.1016/j.mssp.2012.12.003
IF: 4.1
2013-01-01
Materials Science in Semiconductor Processing
Abstract:The electrical and optical properties of zinc oxide (ZnO) films doped with different Na contents and grown by pulsed laser deposition were investigated. Hall measurements witnessed the conductivity conversion from n-type to p-type with targeted Na doping content increased up to more than 1%. The photoluminescence intensity first decreased as the targeted Na content increased to 1%, while non-degraded and even enhanced PL intensity was observed in p-type ZnO:Na0.02 film. This photoluminescence enhancement was ascribed to enhanced radiative recombination with more acceptor (NaZn) introduced. The band-gap shift of ZnO:Nax films was related to the variation of carrier type and concentration. Band-gap shrinkage was adopted to explain the carrier type- and concentration-dependent band-gap shift of ZnO:Nax films.
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