Abstract:Al-doped ZnO (AZO) thin films have been prepared by mist chemical vapor deposition and magnetron sputtering. The band gap shift as a function of carrier concentration in n-type zinc oxide (ZnO) was systematically studied considering the available theoretical models. The shift in energy gap, evaluated from optical absorption spectra, did not depend on sample preparations; it was mainly related to the carrier concentrations and so intrinsic to AZO. The optical gap increased with the electron concentration approximately as ne2∕3 for ne≤4.2×1019 cm−3, which could be fully interpreted by a modified Burstein–Moss (BM) shift with the nonparabolicity of the conduction band. A sudden decrease in energy gap occurred at 5.4−8.4×1019 cm−3, consistent with the Mott criterion for a semiconductor-metal transition. Above the critical values, the band gap increased again at a different rate, which was presumably due to the competing BM band-filling and band gap renormalization effects, the former inducing a band gap widening and the latter an offsetting narrowing. The band gap narrowing (ΔEBGN) derived from the band gap renormalization effect did not show a good ne1∕3 dependence predicated by a weakly interacting electron-gas model, but it was in excellent agreement with a perturbation theory considering different many-body effects. Based on this theory a simple expression, ΔEBGN=Ane1∕3+Bne1∕4+Cne1∕2, was deduced for n-type ZnO, as well as p-type ZnO, with detailed values of A, B, and C coefficients. An empirical relation once proposed for heavily doped Si could also be used to describe well this gap narrowing in AZO.

Carrier Concentration Dependence of Band Gap Shift in N-Type Zno : Al Films

Carrier Concentration Induced Band-Gap Shift in Al-doped Zn1−xMgxO Thin Films

Carrier Type- and Concentration-Dependent Absorption and Photoluminescence of ZnO Films Doped with Different Na Contents

Electrical and Optical Properties of Al–N Co-Doped P-Type Zinc Oxide Films

p-Type conduction in Al–N co-doped ZnO films

Al-Doping Effects on Structure, Electrical and Optical Properties of C-Axis-Orientated Zno : Al Thin Films

Carrier Concentration Dependence Of Acceptor Activation Energy In P-Type Zno

Electron concentration dependence of optical band gap shift in Ga-doped ZnO thin films by magnetron sputtering

Absorption edge shift and broadening in nanostructured Al doped ZnO thin films

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

P -Type Conduction in N–Al Co-Doped ZnO Thin Films

Al concentration dependence of electrical and photoluminescent properties of co-doped ZnO films

The Role of Band Alignment in P-Type Conductivity of Na-Doped Znmgo: Polar Versus Non-Polar

Control of Conduction Type in Al- and N-codoped ZnO Thin Films

Fermi-Level Band Filling and Band-Gap Renormalization in Ga-Doped Zno

Deposition of Al-N Co-Doped P-Type Zn0.95Mg0.05O Thin Films

Optical and Electrical Properties of Highly Nitrogen-Doped Zno Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy

Dominant Factor Determining the Conduction-Type of Nitrogen-Doped Zno Film

P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

Achieve p -type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors

Photoluminescence of diluted Mg doped ZnO thin films and band-gap change mechanisms