Abstract:ZnO and ZnO thin films doped with different Mg contents (0.81at%,2.43at% and 4.05at%) were fabricated by radio frequency-magnetron sputtering (RF-MS) on glass substrates at 450 °C. The microstructure, photoluminescence (PL), optical and electrical properties were investigated. The results show that ZnO and diluted Mg doped ZnO thin films present a hexagonal wurtzite structure with high crystal quality. In the short wavelength side of near band emission (NBE), a high energy emission band for 0.81at% and 2.43at% Mg doped thin films occurs together with NBE. The increasingly high energy band peak gradually covers the NBE peak with Mg doping increasing to 4.05at%. It is suggested that the energy of the electrons near the substituted Mg2+ increases, and these electrons occupy a higher energy level. However, the energy gap between conduction band and valance band still exists because the electrons energy near the un-substituted Zn2+ does not change. With the increasing doped Mg content, electrons in the higher energy level increase and predominate. Therefore, the reason for the increase in the band gap of Mg doped ZnO thin films can be attributed to the increase in the energy of electrons after Mg doping, together with the Burstein-Moss effect. Incidentally, all films exhibit a high average optical transmission (≥85%). The optical band gap of Mg doped ZnO thin films increases with the increasing Mg doping content and changes from 3.36 to 3.52 eV. The resistivity of the Mg doped films are 2.2×10-3, 3.4×10-3 and 8.1×10-3 Ω·cm for 0.81at%, 2.43at% and 4.05at% Mg contents, respectively.

Fermi-Level Band Filling and Band-Gap Renormalization in Ga-Doped Zno

Gallium Doping Dependence of Single-Crystal N-Type Zno Grown by Metal Organic Chemical Vapor Deposition

Effect of Na Concentrations on Microstructure and Optical Properties of Zno Films

Carrier Concentration Induced Band-Gap Shift in Al-doped Zn1−xMgxO Thin Films

Microstructure, Optical and Photoluminescence Properties of Ga-doped ZnO Films Prepared by Pulsed Laser Deposition

Influence of Dopant Content on Morphology and Optical Constants of ZnO:Na Films by Sol-Gel Method

Structural and Electrical Properties of Single Crystalline Ga-Doped Zno Thin Films Grown by Molecular Beam Epitaxy

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

First-principles calculations of structural, electronic and optical properties of ZnGa2O4:Cr3+ system

High optoelectronic performance of magnetron sputtered ZnO thin films co-doped with F and Ga: Experiment and first-principles calculations

Suppression of Visible Light Emission of Zno Nanostructures by Ga-Doping

Electronic and optical properties of different concentrations of Ga doped ZnO: CASTEP study

Photoluminescence of diluted Mg doped ZnO thin films and band-gap change mechanisms

Theoretical investigation on electronic and optical properties of ZnO doped with Al,Ga and In

First-principles study on the effects of Zr doping and interstitial H and O vacancy on the optoelectronic properties of [math]-Ga2O3

Computational and experimental studies on band alignment of ZnO/InxGa2-xO3/GaN heterojunctions

Carrier Type- and Concentration-Dependent Absorption and Photoluminescence of ZnO Films Doped with Different Na Contents

Effects of Cu, Zn Doping on the Structural, Electronic, and Optical Properties of α-Ga2O3: First-Principles Calculations

Direct Observation of Optical Band Gap Components in Ga<sub>1-<i>x</i></sub>Zn<i><sub>x</sub></i>N<sub>1-<i>x</i></sub>O<i><s ub>x</sub></i> Solid-Solution Nanoparticles

Field Emission and Optical Properties of Ga-doped ZnO Nanowires Synthesized Via Thermal Evaporation

Photoluminescence of Undoped and B-doped ZnO in Silicate Glasses