Abstract:Measurements of the Hall coefficient and the electrical conductivity of single-crystal specimens of n-type ZnO at temperatures between 55°K and 300°K are reported. An analysis of carrier concentration vs temperature indicates that "as-grown" crystals contain more than one active donor. Crystals with low initial donor concentrations were doped with H or interstitial Zn or Li, allowing a single-donor-level analysis. Doping was accomplished by interstitial diffusion followed by a rapid quench. Each of the added donors gives rise to a hydrogen-atom-model donor center whose ionization energy is ED=0.051 ev for ND<5×1016 cm-3. Lithium was also found to introduce a small concentration of acceptors, presumably due to an exchange between interstitial and substitutional positions. The quantity (m(N)m)32D-1, where m(N)=density-of-states'' effective mass and D=donor degeneracy , was found to be about 0.19 for all three donors, indicating that if D=2 then m(N)=0.5. The low-frequency dielectric constant of ZnO was redetermined as κ=8.5. The effective mass associated with the electron found in a hydrogen-like orbit is then m(H)=0.27m, and the observed decrease of ED with increasing ND corresponds to the overlap of these large orbits. The Hall mobility is 180 cm2 volt-1 sec-1 at 300°K and increases with decreasing temperature. It has been analyzed for lattice and impurity scattering. The optical-mode scattering mobility has been calculated from both the perturbation and intermediate-coupling theories making use of the effective mass, m(H), so that no adjustable parameters were included. The two theories agree for ZnO since it turns out to have a polar-mode electron coupling constant of α=1. The mobility so obtained is in good agreement with experiment and indicates that optical-mode scattering is important above 200°K. Some acoustical-mode scattering also appears to be present. At low temperatures the mobility appears to be limited by impurity scattering.

Carrier Concentration Dependence Of Acceptor Activation Energy In P-Type Zno

Carrier Concentration Induced Band-Gap Shift in Al-doped Zn1−xMgxO Thin Films

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Correlation Between Carrier Recombination and P-Type Doping in P Monodoped and In–P Codoped ZnO Epilayers

Carrier Concentration Dependence of Band Gap Shift in N-Type Zno : Al Films

Identification of Acceptor States in Li-Doped P-Type Zno Thin Films

Carrier Type- and Concentration-Dependent Absorption and Photoluminescence of ZnO Films Doped with Different Na Contents

Acceptor Formation Mechanisms Determination from Electrical and Optical Properties of P-Type ZnO Doped with Lithium and Nitrogen

Hall Effect Studies of Doped Zinc Oxide Single Crystals

Identification of Acceptor States in Li-N Dual-Doped P-Type Zno Thin Films

Acceptor Evolution in Na-implanted A-Plane Bulk ZnO Revealed by Photoluminescence

High-Mobility Sb-Doped P-Type Zno by Molecular-Beam Epitaxy

Investigation on Na Acceptor Level in P -Type Na-Doped ZnMgO Thin Films Prepared by Pulsed Laser Deposition

Acceptor Related Photoluminescence and Field Emission of Zno:P Nanostructures

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

Temperature-Dependent Exciton-Related Transition Energies Mediated by Carrier Concentrations in Unintentionally Al-Doped Zno Films

Optical Properties of Antimony-Doped P-Type Zno Films Fabricated by Pulsed Laser Deposition

Dielectric Relaxation Of Shallow Donor In Polycrystalline Mn-Doped Zno

Hole Transport Properties of P-Type Polycrystalline ZnO Film Using a Dual-Acceptor Doping Method with Lithium and Nitrogen

Equivalence of donor and acceptor fits of temperature dependent Hall carrier density and Hall mobility data: Case of ZnO

Carrier localization in codoped ZnO:N:Al films