Abstract:Measurements of the Hall coefficient and the electrical conductivity of single-crystal specimens of n-type ZnO at temperatures between 55°K and 300°K are reported. An analysis of carrier concentration vs temperature indicates that "as-grown" crystals contain more than one active donor. Crystals with low initial donor concentrations were doped with H or interstitial Zn or Li, allowing a single-donor-level analysis. Doping was accomplished by interstitial diffusion followed by a rapid quench. Each of the added donors gives rise to a hydrogen-atom-model donor center whose ionization energy is ED=0.051 ev for ND<5×1016 cm-3. Lithium was also found to introduce a small concentration of acceptors, presumably due to an exchange between interstitial and substitutional positions. The quantity (m(N)m)32D-1, where m(N)=density-of-states'' effective mass and D=donor degeneracy , was found to be about 0.19 for all three donors, indicating that if D=2 then m(N)=0.5. The low-frequency dielectric constant of ZnO was redetermined as κ=8.5. The effective mass associated with the electron found in a hydrogen-like orbit is then m(H)=0.27m, and the observed decrease of ED with increasing ND corresponds to the overlap of these large orbits. The Hall mobility is 180 cm2 volt-1 sec-1 at 300°K and increases with decreasing temperature. It has been analyzed for lattice and impurity scattering. The optical-mode scattering mobility has been calculated from both the perturbation and intermediate-coupling theories making use of the effective mass, m(H), so that no adjustable parameters were included. The two theories agree for ZnO since it turns out to have a polar-mode electron coupling constant of α=1. The mobility so obtained is in good agreement with experiment and indicates that optical-mode scattering is important above 200°K. Some acoustical-mode scattering also appears to be present. At low temperatures the mobility appears to be limited by impurity scattering.

Hall Effect Studies of Doped Zinc Oxide Single Crystals

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Hall effect measurements on ZnO accumulation layers

Hole Transport Properties of P-Type Polycrystalline ZnO Film Using a Dual-Acceptor Doping Method with Lithium and Nitrogen

Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films

Equivalence of donor and acceptor fits of temperature dependent Hall carrier density and Hall mobility data: Case of ZnO

Electrical Transport Properties in ZnO Bulk, c/ZnO and ZnMgO/ZnO/ZnMgO Heterostructures

Carrier Concentration Dependence Of Acceptor Activation Energy In P-Type Zno

P -Type Conduction in N–Al Co-Doped ZnO Thin Films

Thermoelectric Properties and Electronic Structure of Al-Doped Zno

Homobuffer Thickness Effect on the Conduction Type of Non-Polar ZnO Thin Films

Dielectric Spectroscopy Studies of ZnO Single Crystal

Effect of Substrate Temperature on Structural, Electrical and Optical Properties of Al-N Co-Doped Zno Thin Films

Point Defects Analysis of Zinc Oxide Thin Films Annealed at Different Temperatures with Photoluminescence, Hall Mobility, and Low Frequency Noise

Na Doping Concentration Tuned Conductivity of ZnO Films Via Pulsed Laser Deposition and Electroluminescence from ZnO Homojunction on Silicon Substrate

Al-Doping Effects on Structure, Electrical and Optical Properties of C-Axis-Orientated Zno : Al Thin Films

Lattice Thermal conductivity of ZnO: Experimental and Theoretical studies

The influence of Nd 3+ doping on the structural, optical, magnetic, and dielectric characteristics of nanoscale hexagonal wurtzite type ZnO

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

Dopant Source Choice for Formation of P-Type ZnO: Li Acceptor