Abstract:Measurements of the Hall coefficient and the electrical conductivity of single-crystal specimens of n-type ZnO at temperatures between 55°K and 300°K are reported. An analysis of carrier concentration vs temperature indicates that "as-grown" crystals contain more than one active donor. Crystals with low initial donor concentrations were doped with H or interstitial Zn or Li, allowing a single-donor-level analysis. Doping was accomplished by interstitial diffusion followed by a rapid quench. Each of the added donors gives rise to a hydrogen-atom-model donor center whose ionization energy is ED=0.051 ev for ND<5×1016 cm-3. Lithium was also found to introduce a small concentration of acceptors, presumably due to an exchange between interstitial and substitutional positions. The quantity (m(N)m)32D-1, where m(N)=density-of-states'' effective mass and D=donor degeneracy , was found to be about 0.19 for all three donors, indicating that if D=2 then m(N)=0.5. The low-frequency dielectric constant of ZnO was redetermined as κ=8.5. The effective mass associated with the electron found in a hydrogen-like orbit is then m(H)=0.27m, and the observed decrease of ED with increasing ND corresponds to the overlap of these large orbits. The Hall mobility is 180 cm2 volt-1 sec-1 at 300°K and increases with decreasing temperature. It has been analyzed for lattice and impurity scattering. The optical-mode scattering mobility has been calculated from both the perturbation and intermediate-coupling theories making use of the effective mass, m(H), so that no adjustable parameters were included. The two theories agree for ZnO since it turns out to have a polar-mode electron coupling constant of α=1. The mobility so obtained is in good agreement with experiment and indicates that optical-mode scattering is important above 200°K. Some acoustical-mode scattering also appears to be present. At low temperatures the mobility appears to be limited by impurity scattering.

Hall effect measurements on ZnO accumulation layers

Hall Effect Studies of Doped Zinc Oxide Single Crystals

Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films

A First-Principles Study Of Zno Polar Surface Growth: Adsorption Of Znxoy Clusters

Slow Oscillations in the Low-Temperature Optical Reflectance Spectra of ZnO: Surface Space-Charge Effect

Local Aspects of Hydrogen-Induced Metallization of the ZnO(10$\mathbf{\overline{1}}$0) Surface

Electrical Transport Properties in ZnO Bulk, c/ZnO and ZnMgO/ZnO/ZnMgO Heterostructures

Hole Transport Properties of P-Type Polycrystalline ZnO Film Using a Dual-Acceptor Doping Method with Lithium and Nitrogen

Probing the Surface Effect on Deep-Level Emissions of an Individual ZnO Nanowire Via Spatially Resolved Cathodoluminescence

Reflection Electron Microscopy Observations of Dislocations and Dislocation Motion in Zinc Oxide

Point Defects Analysis of Zinc Oxide Thin Films Annealed at Different Temperatures with Photoluminescence, Hall Mobility, and Low Frequency Noise

Presence of a (1x1) oxygen overlayer on bare ZnO(0001) surfaces and at Schottky interfaces

The role of surface depletion layer effects on the enhancement of the UV emission in ZnO induced by a nanostructured Al surface coating

Investigation of Morphology and Electrical Properties of Structures Based on the Heterojunction Monocrystalline Si/Microcrystalline ZnO

In-situ quantitative measurement of electric fields in zinc oxide thin films using electrostatic force microscopy

Dual-acceptor P-Type Behaviour in ZnO Films Grown by Plasma-Assisted Metalorganic Chemical Vapour Deposition

Stabilization of Semiconductor Surfaces Through Bulk Dopants

Surface modification by high-energy heavy-ion irradiation in various crystalline ZnO facets

Reduction Kinetics and Mass Transport of ZnO Single Entities on a Hg Ultramicroelectrode

Nonlinear Optical Excitation of Surface Exciton Polaritons in Zno

Structural and Optical Properties of Electrodeposited ZnO Thin Films