Abstract:Measurements of the Hall coefficient and the electrical conductivity of single-crystal specimens of n-type ZnO at temperatures between 55°K and 300°K are reported. An analysis of carrier concentration vs temperature indicates that "as-grown" crystals contain more than one active donor. Crystals with low initial donor concentrations were doped with H or interstitial Zn or Li, allowing a single-donor-level analysis. Doping was accomplished by interstitial diffusion followed by a rapid quench. Each of the added donors gives rise to a hydrogen-atom-model donor center whose ionization energy is ED=0.051 ev for ND<5×1016 cm-3. Lithium was also found to introduce a small concentration of acceptors, presumably due to an exchange between interstitial and substitutional positions. The quantity (m(N)m)32D-1, where m(N)=density-of-states'' effective mass and D=donor degeneracy , was found to be about 0.19 for all three donors, indicating that if D=2 then m(N)=0.5. The low-frequency dielectric constant of ZnO was redetermined as κ=8.5. The effective mass associated with the electron found in a hydrogen-like orbit is then m(H)=0.27m, and the observed decrease of ED with increasing ND corresponds to the overlap of these large orbits. The Hall mobility is 180 cm2 volt-1 sec-1 at 300°K and increases with decreasing temperature. It has been analyzed for lattice and impurity scattering. The optical-mode scattering mobility has been calculated from both the perturbation and intermediate-coupling theories making use of the effective mass, m(H), so that no adjustable parameters were included. The two theories agree for ZnO since it turns out to have a polar-mode electron coupling constant of α=1. The mobility so obtained is in good agreement with experiment and indicates that optical-mode scattering is important above 200°K. Some acoustical-mode scattering also appears to be present. At low temperatures the mobility appears to be limited by impurity scattering.

Homobuffer Thickness Effect on the Conduction Type of Non-Polar ZnO Thin Films

Synthesis and Characterization of Al–N Codoped P-Type ZnO Epitaxial Films Using High-Temperature Homo-Buffer Layer

Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films

p-type non-polar m-plane ZnO films grown by plasma-assisted molecular beam epitaxy

Improved N–Al Codoped P-Type ZnO Thin Films by Introduction of a Homo-Buffer Layer

P-Type Behavior in Nominally Undoped Zno Thin Films by Oxygen Plasma Growth

Effect of the ZnO buffer layer thickness on AZO film properties

Control of Conduction Type in Al- and N-codoped ZnO Thin Films

P -Type Conduction in N–Al Co-Doped ZnO Thin Films

Dopant Source Choice for Formation of P-Type ZnO: Li Acceptor

The Role of Band Alignment in P-Type Conductivity of Na-Doped Znmgo: Polar Versus Non-Polar

Multi-Carrier Transport Properties in P-Type Zno Thin Films

p-Type conduction in Al–N co-doped ZnO films

Effects of diffusion temperature and diffusion time on fabrication of Na-diffused p-type ZnO thin films

Hole Transport Properties of P-Type Polycrystalline ZnO Film Using a Dual-Acceptor Doping Method with Lithium and Nitrogen

Non-Polar P-Type Zn0.94mn0.05na0.01o Texture: Growth Mechanism and Codoping Effect

Effect of Na contents on fabrication of p-type non-polar m -plane ZnO films

Hall Effect Studies of Doped Zinc Oxide Single Crystals

Optical and Electrical Properties of Highly Nitrogen-Doped Zno Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy

Control of p- and n-type conductivities in P doped ZnO thin films by using radio-frequency sputtering

Enhanced Photoluminescence of Nonpolar P-Type Zno Film by Surface Plasmon Resonance and Electron Transfer