Abstract:An atmospheric pressure mist chemical vapor deposition (mist-CVD) system has been developed to prepare zinc oxide (ZnO)-based thin films. This is a promising method for large-area deposition at low temperatures taking into account of its simplicity, inexpensiveness, and safety. Nominally pure ZnO, Al-doped n-type ZnO (ZnO:Al), and N-doped p-type ZnO (ZnO:N) thin films, as well as Zn1−xCdxO and Zn1−yMgyO alloy films, have been deposited by this mist-CVD system. The films deposited at the temperatures ranging from 400 to 500°C were of an acceptable crystallinity with (002) preferential orientation and homogeneous surface. All the films exhibited high transmittance of about 90% in visible regions and dominant UV emission in the photoluminescence spectra. The n-type ZnO:Al films had a low resistivity of 1.08×10–3Ωcm at an optimal Al content of 4at%. The p-type conductivity was obtained in ZnO:N films annealed at higher temperatures with a resistivity of 72.8Ωcm, Hall mobility of 2.28cm2V−1s−1, and hole concentration of 3.76×1016cm−3, as confirmed by Hall-effect measurements. A hydrogen-assisted nitrogen-doping mechanism was proposed to answer for the realization of p-type conductivity in ZnO. The films of Zn1−xCdxO and Zn1−yMgyO ternary alloys were also deposited by this technique. The band gap energies, for instance, were 3.05eV for Zn1−xCdxO (x=0.06), 3.28eV for ZnO, and 3.56eV for Zn1−yMgyO (y=0.11), as confirmed by the optical absorption spectra. The band gap engineering could be readily realized in the ZnO system using mist-CVD.

Synthesis and Characterization of Al–N Codoped P-Type ZnO Epitaxial Films Using High-Temperature Homo-Buffer Layer

Improved N–Al Codoped P-Type ZnO Thin Films by Introduction of a Homo-Buffer Layer

Zno-based Thin Films Synthesized by Atmospheric Pressure Mist Chemical Vapor Deposition

Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering

Preparation and Characteristic of P-Type ZnO Films by Al–N Codoping Technique

Preparation of P-Type ZnO Films by Al+N-codoping Method

p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p–n homojunctions

Reproducibility and Stability of N–Al Codoped P -Type ZnO Thin Films

Dependence of properties of N?Al codoped p-type ZnO thin films on growth temperature

Effect of the ZnO buffer layer thickness on AZO film properties

p-Type conduction in Al–N co-doped ZnO films

Effects of Al Content on Properties of Al–N Codoped ZnO Films

Al–N codoping and p-type conductivity in ZnO using different nitrogen sources

Synthesis and Characterization of Al-N Codoped Zn_(1-x)Mg_xO Thin Films

Fabrication of p-type ZnMgO codoped with Al and N using dc reactive magnetron sputtering

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

Electrical and Optical Properties of Al–N Co-Doped P-Type Zinc Oxide Films

Deposition of Al-N Co-Doped P-Type Zn0.95Mg0.05O Thin Films

Microstructure and Electrical Properties of Al-doped ZnO Thin Films