Abstract:For applications in the field of optoelectronics, zinc oxide (ZnO) based transparent conducting oxide thin films such as aluminium-doped zinc oxide (AZO) have recently received much attention. It is one of the most promising alternative materials to the widely used indium tin oxide (ITO or tin-doped indium oxide) and fluorine-doped tin oxide (FTO). In this work, the ZnO and AZO base thin films were prepared by radio frequency (rf) magnetron sputtering technique using ZnO and AZO (1at%Al) ceramic target. The Ga interlayer films, added in between base thin films (ZnO and AZO), were deposited by evaporation technique. Both ZnO/Ga/ZnO and AZO/Ga/AZO multilayer thin film structures were grown on glass substrates. Then the obtained multilayer structures were annealed in argon (Ar) ambient at 400°C for 1 hr. The morphology, qualitative and quantitative elemental analysis, crystal structure, electrical properties, and optical properties of the multilayer thin films were characterized by field emission scanning electron microscope (FE-SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), a four-point probe method and UV-Vis spectroscopy. The results revealed that after annealing treatment, the average transmittance of the both multilayer thin films in visible region was improved due to a decrease in surface roughness resulting in an increase in crystalline surface. Furthermore, the results revealed lower sheet resistance in the AZO/Ga/AZO relative to pure ZnO multilayer base thin films. The significance of the electrical properties of the AZO/Ga/AZO films can be achieved due to local structure of Al site in ZnO and partial diffusion of Ga atoms into the base thin film layers. This indicates that the Ga interlayer in both ZnO/Ga/ZnO and AZO/Ga/AZO multilayer thin films can be used to further improve electrical conductivity without degrading optical transmission.

Effect of the ZnO buffer layer thickness on AZO film properties

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Fabrication and Properties of Transparent Conductive AZO/Cu Bilayer Films

Effect of Film Thickness on Properties of Al-Doped Zno Film As Transparent Conducting Electrodes in Oleds

Optoelectronic effect of Al-based buffer layers on Al-doped ZnO thin transparent conductive films on flexible substrates

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Influence of Buffer Layers on the Piezoelectric Property of ZnO Film

Influence of buffer layer on optoelectronic properties of B-Mg co-doped ZnO ultrathin film for high-performance transparent conductor application

Effect of Mg Content and Buffer Layer on Properties of ZnMgO: Ga Thin Films

The Roles of Buffer Layer Thickness on the Properties of the ZnO Epitaxial Films

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Effect of Gallium Interlayer in ZnO and Al-doped ZnO Thin Films

Effects of oxide buffer layers on the microstructure and electrical properties of PLZST 2/87/10/3 antiferroelectric thin films

Structural, Electrical, and Optical Properties of ZnInO Alloy Thin Films

Improvement of the crystallinity and optical properties of sol-gel ZnO thin film by a PVD ZnO buffer layer

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Studies on Morphology, Electrical and Optical Characteristics of Al-doped ZnO Thin Films Grown by Atomic Layer Deposition

ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy

Synthesis and Characterization of Al–N Codoped P-Type ZnO Epitaxial Films Using High-Temperature Homo-Buffer Layer

Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition