Abstract:For applications in the field of optoelectronics, zinc oxide (ZnO) based transparent conducting oxide thin films such as aluminium-doped zinc oxide (AZO) have recently received much attention. It is one of the most promising alternative materials to the widely used indium tin oxide (ITO or tin-doped indium oxide) and fluorine-doped tin oxide (FTO). In this work, the ZnO and AZO base thin films were prepared by radio frequency (rf) magnetron sputtering technique using ZnO and AZO (1at%Al) ceramic target. The Ga interlayer films, added in between base thin films (ZnO and AZO), were deposited by evaporation technique. Both ZnO/Ga/ZnO and AZO/Ga/AZO multilayer thin film structures were grown on glass substrates. Then the obtained multilayer structures were annealed in argon (Ar) ambient at 400°C for 1 hr. The morphology, qualitative and quantitative elemental analysis, crystal structure, electrical properties, and optical properties of the multilayer thin films were characterized by field emission scanning electron microscope (FE-SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), a four-point probe method and UV-Vis spectroscopy. The results revealed that after annealing treatment, the average transmittance of the both multilayer thin films in visible region was improved due to a decrease in surface roughness resulting in an increase in crystalline surface. Furthermore, the results revealed lower sheet resistance in the AZO/Ga/AZO relative to pure ZnO multilayer base thin films. The significance of the electrical properties of the AZO/Ga/AZO films can be achieved due to local structure of Al site in ZnO and partial diffusion of Ga atoms into the base thin film layers. This indicates that the Ga interlayer in both ZnO/Ga/ZnO and AZO/Ga/AZO multilayer thin films can be used to further improve electrical conductivity without degrading optical transmission.

Effect of Mg Content and Buffer Layer on Properties of ZnMgO: Ga Thin Films

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Effect of the ZnO buffer layer thickness on AZO film properties

Preparation of ZnMgO:Ga Thin Films on Flexible Substrates by Pulsed Laser Deposition

Effect of Magnesium Doping on the Light-Induced Hydrophilicity of Zno Thin Films

Effects of Mg Doping on the Properties of Highly Transparent Conductive and Near Infrared Reflective Zn1−xMgxO:Ga Films

Influence of buffer layer on optoelectronic properties of B-Mg co-doped ZnO ultrathin film for high-performance transparent conductor application

Optoelectronic effect of Al-based buffer layers on Al-doped ZnO thin transparent conductive films on flexible substrates

Improvement of Transparent Conductive Properties of GZO/Cu/GZO Tri-Layer Films by Introducing H2 into Sputtering Atmosphere

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Effect of Film Thickness on Properties of Al-Doped Zno Film As Transparent Conducting Electrodes in Oleds

Effect of Mg Content on Structural, Electrical, and Optical Properties of Li-doped Zn1−xMgxO Thin Films

Effect of Gallium Interlayer in ZnO and Al-doped ZnO Thin Films

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Conductive Ga doped ZnO/Cu/Ga doped ZnO thin films prepared by magnetron sputtering at room temperature for flexible electronics

Study on the Structural, Electrical, Optical, Adhesive Properties and Stability of Ga-Doped Zno Transparent Conductive Films Deposited on Polymer Substrates at Room Temperature

Room-temperature growth and optoelectronic properties of GZO/ZnO bilayer films on polycarbonate substrates by magnetron sputtering

Transparent and conductive Ga-doped ZnO films grown by RF magnetron sputtering on polycarbonate substrates

Effects of Mg Content on the Optical Properties of MgZnO Fims

Ga, Mg, F ternary-doped ZnO-based transparent conductive film prepared by radio-frequency sputtering with high transmittance

Effect of the Film Thickness on the Performance of GZO Transparent Conductive Layer and LEDs with GZO Electrode