Abstract:Aluminum-doped ZnO (AZO) transparent conducting films were deposited on glass substrates with and without intrinsic ZnO (i-ZnO) buffer layers by a home made and low cost radio-frequency (RF) magnetron sputtering system at room temperature in pure argon ambient and under a low vacuum level. The films were examined and characterized for electrical, optical, and structural properties for the application of CIGS solar cells. The influence of sputter power, deposition pressure, film thickness and residual pressure on electrical and optical properties of layered films of AZO, i-ZnO and AZO/i-ZnO was investigated. The optimization of coating process parameters (RF power, sputtering pressure, thickness) was carried out. The effects of i-ZnO buffer layer on AZO films were investigated. By inserting thin i-ZnO layers with a thickness not greater than 125 nm under the AZO layers, both the carrier concentration and Hall mobility were increased. The resistivity of these layered films was lower than that of single layered AZO films. The related mechanisms and plasma physics were discussed. Copper indium gallium selenide (CIGS) thin film solar cells were fabricated by incorporating bi-layer ZnO films on CdS/CIGS/Mo/glass substrates. Efficiencies of the order of 7–8% were achieved for the manufactured CIGS solar cells (4–5 cm 2 in size) without antireflective films. The results demonstrated that RF sputtered layered AZO/i-ZnO films are suitable for application in low cost CIGS solar cells as transparent conductive electrodes.

Optoelectronic effect of Al-based buffer layers on Al-doped ZnO thin transparent conductive films on flexible substrates

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Effect of the ZnO buffer layer thickness on AZO film properties

Effect of ZnO buffer layer on AZO film properties and photovoltaic applications

Effect of Film Thickness on Properties of Al-Doped Zno Film As Transparent Conducting Electrodes in Oleds

Influences Of Different Buffer Layers On Al-Doped Zno Flims Deposited By Rf Magnetron Sputtering

Effect of Al-doped on Optics and Electricity of ZnO (ZnO∶Al) Thin Films

Al2O3 Buffer Layers and Characteristics of Organic Light Emitting Devices Made of Al-Doped ZnO Films

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Room-temperature Deposition of Transparent Conducting Al-doped ZnO Films by RF Magnetron Sputtering Method

Atomic Layer-Deposited Al-Doped ZnO Thin Films for Display Applications

The properties of Al doped ZnO thin films deposited on various substrate materials by RF magnetron sputtering

Structural ,Electrical ,and Optical Properties of Transparent Conductive Al-Doped ZnO Films Prepared by RF Magnetron Sputtering

Al-Doped Zno Thin-Film Transistors on Flexible Plastic Substrate

Effects of deposition power and pressure on the crystallinity of Al-doped ZnO thin films at glass substrates by low temperature RF magnetron sputtering

Research on Preparation and Properties of Transparent Conductive ZnO:Al Thin films

Processing Parameters and Property of Azo Thin Film Prepared by Magnetron Sputtering

Research Progress of Transparent Conductive Aluminum-doped Zinc Oxide Films

Al-doped ZnO Thin Films with Excellent Optoelectronic Properties Prepared Using H 2 -Assisted Reactive Magnetron Sputtering at Low Temperatures for Potential Application in Photovoltaic Devices

Influence of buffer layer on optoelectronic properties of B-Mg co-doped ZnO ultrathin film for high-performance transparent conductor application

Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.