Radio frequency magnetron sputtering deposition of low-resistivity and broad-spectral transmission F and Al co-doped ZnO film with mobility exceeding 50 cm2 V−1 s−1

Xudong Meng,Huarong Zhang,Xiaobo Zhang,Guoxi Zheng,Xicheng Xie,Bing Han,Fu Yang,Hailin Pei,Yanfeng Wang

DOI: https://doi.org/10.1016/j.ijleo.2020.165105

IF: 3.1

2020-10-01

Optik

Abstract:Al and F co-doped ZnO (FAZO) films with low doping ratios were deposited on glass substrates via radiofrequency magnetron sputtering. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of the deposited films were systematically investigated. Good performance of the FAZO film, including a carrier concentration of 4.15 × 1020 cm−3, mobility of 37.35 cm2 V−1 s−1, resistivity of 4.03 × 10−4 Ω cm, and nearly 90 % average transmittance in the 400–1200 nm region, was obtained at 180 W. After annealing treatment, the photoelectric properties of the film were significantly improved, the mobility was enhanced to >50 cm2 V−1 s−1, the resistivity was reduced to ∼3.8 × 10−4 Ω cm, and the average transmittance between 400–1200 nm was increased to >91 %. The excellent electrical conductivity and wide-spectrum transparency indicated that the FAZO films have broad application prospects in wide-spectrum thin-film solar cells.

optics