Improved piezoelectric properties of zno films obtained by magnetron sputtering power stacking process
Youjiang Li,Yan Zhang,Qingxiong Cui,Yong Ren,Bo Dai,Xingyun Jin,Yeming Shi
DOI: https://doi.org/10.1007/s10854-024-13598-x
2024-10-07
Journal of Materials Science Materials in Electronics
Abstract:Piezoelectric ZnO thin films have good stability, binding force, and high electromechanical coupling coefficient, making them suitable for piezoelectric devices like sensors. However, the piezoelectric coefficient d 33 of ZnO films is still not high enough for applications, such as smart bolts in the structural health monitoring field. Herein, a novel method of power stacking of 3-μm-thick ZnO thin films pre-deposited onto nickel-based alloy substrates via RF magnetron sputtering was proposed. Compared to single power samples, the ZnO thin films formed through the sputtering power stacking at 300 W\200 W\100 W showed a clearly distinguishable preferred orientation (002). Meanwhile, the films exhibited relatively fine and uniform grains, coarse columnar crystals, and small roughness. More importantly, the piezoelectric coefficients d 33 of ZnO thin films obtained by the power stacking were improved to 1976.92 pm/V, being 7 times higher than those obtained at a single power and reported in the literature. Thus, this work provides a simple method of piezoelectric performance improvement for future development of advanced devices.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied