Fabrication of p-type ZnMgO codoped with Al and N using dc reactive magnetron sputtering

Y YE,Z YE,L CHEN,B ZHAO,L ZHU
DOI: https://doi.org/10.1016/j.apsusc.2006.04.039
IF: 6.7
2006-01-01
Applied Surface Science
Abstract:We report the fabrication of p-type Zn0.9Mg0.1O thin films codoped with Al and N via dc magnetron sputtering method. The XRD patterns show the as-grown films with a strict c-axis orientation. Hall effect measurement confirms the conversion of conduction type in a certain range of temperature. The obtained films with the best electrical properties show a hole concentration in the order of 10(18) cm(-3) and resistivity in the range of 20-30 Omega cm. The transmittance spectrum reveals a distinct blue shift between pure ZnO and Al-N codoped Zn0.9Mg0.1O films, which confirms the effective incorporation of Mg. The band gap of the alloy is controllable. (c) 2006 Elsevier B.V. All rights reserved.
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