Abstract:Al-doped ZnO films were grown by reactive electron beam evaporation with ceramic targets,(ZnO)_(1-x)(Al_2O_3)_x(x=w(Al_2O_3)=0, 0.01,0.02,0.05),as source materials.The structural and electrical properties of Al-doped ZnO films were characterized by X-ray diffraction,Raman scattering and Hall investigations.The results showed that Al-doped ZnO films grown from(ZnO)_(1-x)(Al_2O_3)_x(x≤0.02) targets were still highly c-axis oriented,although the degree of c-axis orientation was somewhat degenerated along with further increase of Al content in the films.Raman scattering measurements indicated that the internal stress in Al-doped ZnO films increased along with the increase of Al content in the films and reached saturation in the case of x = 0.02.The actual atomic Al content in the films grown using(ZnO)_(0.98)(Al_2O_3)_(0.02) target was 6%,which was normalized with the Zn content in the film.The resistivity of Al-doped ZnO films first decreased with the increase of Al content in the film and reached a minimum of 7.85×10~(-4) Ω·cm at x=(0.02,) then increased with further increase of Al content in the film.The nature of the minimum resistivity of Al-doped ZnO films grown using(ZnO)_(0.98)(Al_2O_3)_(0.02) target was ascribed to the high electron density(1.32×10~(21) cm~(-3)) as well as its high electron mobility of 6.02 cm~2/(V·s).

Deposition of Al-N Co-doped p-type Zn0.95Mg0.05O thin films

Deposition of Al-N Co-Doped P-Type Zn0.95Mg0.05O Thin Films

Fabrication of p-type ZnMgO codoped with Al and N using dc reactive magnetron sputtering

Synthesis and Characterization of Al-N Codoped Zn_(1-x)Mg_xO Thin Films

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

P -Type Conduction in N–Al Co-Doped ZnO Thin Films

p-Type conduction in Al–N co-doped ZnO films

Carrier Concentration Induced Band-Gap Shift in Al-doped Zn1−xMgxO Thin Films

Formation of p-type ZnMgO thin films by In–N codoping method

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Growth and Characteristics of p-Type ZnO Films Doped with Al and N

Fabrication of P-Type ZnMgO Films Via Pulsed Laser Deposition Method by Using Li As Dopant Source

Growth of Al–N codoped p-type ZnMgO thin films on different substrates

P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering

Preparation of P-Type ZnO Films by Al+N-codoping Method

Electrical and Optical Properties of Al–N Co-Doped P-Type Zinc Oxide Films

Al–N codoping and p-type conductivity in ZnO using different nitrogen sources

p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p–n homojunctions

Fabrication and Properties of P-Type K Doped Zn1−Mg O Thin Film

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering