Abstract:ZnAlO thin films with different Al concentrations were prepared on glass and silicon substrates by Magnetron sputtering in this paper. Scanning electron microscopy (SEM), X-ray diffraction (XRD), spectrometer and other instruments were used to analyze the surface morphology, microstructure, transmittance and Raman spectrum of the films. The results showed that trace Al doping significantly increased the surface morphology and size of ZnAlO thin films; The low doped ZnAlO thin film exhibits a good preferred orientation. As the Al doping concentration increases, the main growth direction of the crystal gradually shifts from (101) to (103), and the grain size decreases with the increase of doping concentration during low doping; When the wavelength of ZnAlO film is less than 330 nm, the transmittance of the film is almost zero; When the wavelength is greater than 350 nm, the transmittance of the thin film decreases with the increase of Al doping concentration, and there is a blue shift trend with the increase of Al concentration. When the wavelength is between 420-900nm, the average transmittance of ZnAlO thin film can reach over 90%, and the transmission performance is good; The ZnAlO thin films all have structural characteristic peaks of wurtzite with a frequency of about 437 cm −1 , and the Raman peak position does not move with the increase of Al concentration.

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Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Deposition of Al-N Co-doped p-type Zn0.95Mg0.05O thin films

Carrier Concentration Induced Band-Gap Shift in Al-doped Zn1−xMgxO Thin Films

Fabrication of p-type ZnMgO codoped with Al and N using dc reactive magnetron sputtering

Microstructue and Optical Properties of Mg-doped ZnO Thin Films Prepared by Sol-gel Method

Surface Topography and Optical Properties of Al-doped ZnO Thin Films by Sol-gel Process

Growth of Al–N codoped p-type ZnMgO thin films on different substrates

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Formation of p-type ZnMgO thin films by In–N codoping method

p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p–n homojunctions

p-Type conduction in Al–N co-doped ZnO films

Synthesis and Characterization of Al–N Codoped P-Type ZnO Epitaxial Films Using High-Temperature Homo-Buffer Layer

Reproducibility and Stability of N–Al Codoped P -Type ZnO Thin Films

Microstructure and optical properties of ZnAlO films prepared by Magnetron sputtering

Cubic MgxZn1−xO Films Grown on SiO2 Substrates

P -Type Conduction in N–Al Co-Doped ZnO Thin Films

Structural, electrical and optical properties of N-doped ZnO films synthesized by SS-CVD

Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering