Abstract:In–N codoped ZnMgO films have been prepared on glass substrates by direct current reactive magnetron sputtering. The p-type conduction could be obtained in ZnMgO films by adjusting the N2O partial pressures. The lowest resistivity was found to be 4.6Ωcm for the p-type ZnMgO film deposited under an optimized N2O partial pressure of 2.3mTorr, with a Hall mobility of 1.4cm2/Vs and a hole concentration of 9.6×1017cm−3 at room temperature. The films were of good crystal quality with a high c-axis orientation of wurtzite ZnO structure. The presence of In–N bonds was identified by X-ray photoelectron spectroscopy, which may enhance the nitrogen incorporation and respond for the realization of good p-type behavior in In–N codoped ZnMgO films. Furthermore, the ZnMgO-based p–n homojunction was fabricated by deposition of an In-doped n-type ZnMgO layer on an In–N codoped p-type ZnMgO layer. The p–n homostructural diode exhibits electrical rectification behavior of a typical p–n junction.

p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p–n homojunctions

Junction Properties of Nitrogen-Doped Zno Thin Films

p-Type conduction in Al–N co-doped ZnO films

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

P -Type Conduction in N–Al Co-Doped ZnO Thin Films

Al–N codoping and p-type conductivity in ZnO using different nitrogen sources

Reproducibility and Stability of N–Al Codoped P -Type ZnO Thin Films

Preparation and Characteristic of P-Type ZnO Films by Al–N Codoping Technique

Improved N–Al Codoped P-Type ZnO Thin Films by Introduction of a Homo-Buffer Layer

Electrical and Optical Properties of Al–N Co-Doped P-Type Zinc Oxide Films

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

N and Al co-doping as a way to p-type ZnO without post-growth annealing

Preparation of P-Type ZnO Films by Al+N-codoping Method

Low-resistivity, Stable P-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method

ZnO P-N Homojunctions and Ohmic Contacts to Al–N-co-doped P-Type ZnO

Deposition of Al-N Co-Doped P-Type Zn0.95Mg0.05O Thin Films

Formation of p-type ZnMgO thin films by In–N codoping method

Preparation and Properties of N-Doped P-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the C -Axis Parallel to the Substrate

Dependence of properties of N?Al codoped p-type ZnO thin films on growth temperature

P-Type Behavior in In–N Codoped ZnO Thin Films