Dependence of properties of N?Al codoped p-type ZnO thin films on growth temperature

J LU,L ZHU,Z YE,F ZHUGE,Y ZENG,B ZHAO,D MA
DOI: https://doi.org/10.1016/j.apsusc.2004.09.112
IF: 6.7
2005-01-01
Applied Surface Science
Abstract:N–Al codoped p-type ZnO thin films have been realized by dc reactive magnetron sputtering in N2O ambient. Hall measurement, X-ray photoelectron spectroscopy, X-ray diffraction and optical transmission were carried out to investigate the effect of growth temperature on the properties of codoped films. Results indicated that N–Al codoped p-type ZnO films with good structural, electrical and optical properties can only be obtained at an intermediate temperature region (e.g., 500°C). The codoped p-type ZnO had the lowest resistivity of 57.3Ωcm, and a carrier concentration up to 2.52×1017cm−3. In addition, the N–Al codoped p-type ZnO film deposited at 500°C was of good crystallinity with a (002) preferential orientation, and high transmittance about 90% in the visible region.
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