Abstract:In this study, highly c-axis-oriented ZnO:TM (TM = Co, Fe, and Mn) thin films doped with different doping levels (x = 0–10 at%) of TM were grown by chemical (sol-gel) and physical (magnetron sputtering) film deposition methods. These films were scrutinized by XRD, AFM, FESEM, EDX, XPS, Uv-Vis spectrophotometer, and VSM magnetometer. All the films have a powerful preferential c-axis orientation with a hexagonal polycrystalline structure. Comparatively, the stronger c-axis orientation and higher crystalline quality were observed for the chemically fabricated films than those physically derived. The chemically derived films had relatively higher roughness and it was decreased with increasing TM doping concentration. Compared to the ZnO, an increment in the crystallinity of chemically derived films was observed with an enhanced TM doping ratio, whereas a decrement in physically derived films was observed. The existence of Zn, Mn, Co, Fe, and O atoms and Zn 2+ , Co 2+ , Mn 2+ , and Fe 2+ ions were determined. Optical analysis revealed that the transmittance of chemically derived ZnO:TM thin films was relatively higher than physically produced, and the optical band gap of the films produced by both techniques was in good agreement with each other except for the ZMO. Magnetic measurements showed a clear room temperature ferromagnetic behavior for the ZnO:Mn and ZnO:Fe films. In contrast, paramagnetic behavior was observed for the chemically and physically produced ZnO:Co films. Among all films, the highest ferromagnetic response was obtained for the ZnO:Fe films due to their high crystallinity and purity. These outcomes reflect the produced films have great potential to be promising materials for optoelectronic and spintronic applications.

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