The Magnetic Properties of Co-Doped Zno Diluted Magnetic Insulator Films Prepared by Direct Current Reactive Magnetron Co-Sputtering

C. Song,F. Zeng,K. W. Geng,X. B. Wang,Y. X. Shen,F. Pan
DOI: https://doi.org/10.1016/j.jmmm.2006.06.012
IF: 3.097
2007-01-01
Journal of Magnetism and Magnetic Materials
Abstract:Co-doped ZnO ferromagnetic films were prepared by direct current reactive magnetron co-sputtering at significantly low growth temperature (∼200∘C). Employing complementary characterization we show that a solid solution of Co throughout the ZnO films, where Co is in the 2+ state substituting for Zn. Room temperature ferromagnetism with magnetic moment of 1.1μB/Co and a high Curie temperature TC of 750K are observed in (4at%) Co:ZnO films, which is not carrier mediated, but co-exists with the dielectric state. The combination of film growth by certain concentration of cobalt doping (∼4at%) and low growth temperature deposition is proved to be key in enhancing the ferromagnetism. The mechanisms responsible for the ferromagnetism in insulating Co:ZnO films are discussed, which is of help for a better understanding of ferromagnetism in transition-metal-doped oxides.
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