The Role Of Zn Interstitials In Cobalt-Doped Zno Diluted Magnetic Semiconductors

Tongfei Shi,Zhenguo Xiao,ZhiJun Yin,Xinhua Li,Yuqi Wang,Hongtao He,Jiannong Wang,Wenshen Yan,Shiqiang Wei
DOI: https://doi.org/10.1063/1.3437082
IF: 4
2010-01-01
Applied Physics Letters
Abstract:Co-doped ZnO samples Zn(1-x)Co(x)O and Co(y)Zn(1-y)O were prepared by the sol-gel and magnetron sputtering methods, respectively. Although the Co K-edge extended x-ray absorption fine structure spectra show that the doped Co ions are located at the Zn substitutional sites for both Zn(1-x)Co(x)O (x <= 0.05) and Co(y)Zn(1-y)O (y <= 0.05) samples, magnetic measurements show paramagnetism in Zn(1-x)Co(x)O (x <= 0.05) and high temperature ferromagnetism in Co(y)Zn(1-y)O (y <= 0.05). An experimental and numerical study of the O K-edge x-ray absorption near-edge structure spectra reveals that the incorporation of the Zn interstitials in the lattice is crucial to the appearance of high temperature ferromagnetism in Co(y)Zn(1-y)O (y <= 0.05) samples. (C) 2010 American Institute of Physics. [doi:10.1063/1.3437082]
What problem does this paper attempt to address?