Abstract:Diluted magnetic semiconductors (DMS), in which some atoms of host semiconductors are randomly substituted by magnetic atoms, are regarded as key materials for spintronics because they have charge and spin degrees of freedom in a single substance. ZnO is a potential candidate for applications of spintronics devices since its possibility for room temperature ferromagnetism and its intrinsic excellent electrical properties. ZnO is also suitable for fabricating carrier controllable ferromagnetism because carrier-controlling techniques for ZnO have been well established. And among the methods used for deposition of thin films, PLD is effective and has the advantage that the ratios of the elemental components of the bulk and film are almost the same, even for chemically complex systems. In this paper, Zn 0.95 Co 0.05 O thin films were prepared by pulse laser deposition(PLD) on silicon(100) and quartz substrates. By optimizing the growth conditions, the Co-doped ZnO thin films obtained at temperature of 700 9C and oxygen pressure of 0.02 Pa showed magnetism even at room temperature. The X-ray diffraction patterns suggested that the obtained films showed c axis orientation preference, and Co related phases such as Co 2O 3 didn't appear, simply indicating that Co ions had been successfully doped into ZnO crystal lattices. SEM images showed that the films have dense surfaces with small roughness. The obtained sample was measured to have a hole concentration of ∼10 18 cm -3, a mobility of 18.7 cm 2 · V -1 · s -1, and a resistivity of about 0.04 Ω · cm, maintaining semiconductivity. And the magnetization of the Co-doped ZnO film can be measured at 12 K, even at room temperature.

Fabrication and Properties of Li-doped ZnCoO Diluted Magnetic Semiconductor Thin Films

Characterization of ZnO:Co particles prepared by hydrothermal method for room temperature magnetism

Fabrication and magnetic properties of co-doped ZnO thin films by pulsed laser deposition

Electric and Magnetic Behaviors of Li and Co Codoped ZnO Thin Film on Si (100) Substrate

Structural and Magnetic Properties of Co-doped ZnO Thin Films

Structural, optical and magnetic properties of Co-doped ZnO films

The Magnetic Properties of Co-Doped Zno Diluted Magnetic Insulator Films Prepared by Direct Current Reactive Magnetron Co-Sputtering

Transition from Diluted Magnetic Insulator to Semiconductor in Co-Doped Zno Transparent Oxide

Properties of Zn1-xCoxO thin films grown on silicon substrates prepared by pulsed laser deposition

d0 Ferromagnetism in Li-doped ZnO Compounds

The Effects of Group-I Elements Co-Doping with Mn in ZnO Dilute Magnetic Semiconductor

Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?

Substrate-Dependent Magnetization In Co-Doped Zno Insulating Films

The Role Of Zn Interstitials In Cobalt-Doped Zno Diluted Magnetic Semiconductors

Room-Temperature Fabricated Zncoo Diluted Magnetic Semiconductors

Influence of N Dopant on the Electric and Magnetic Properties of Co Doped ZnO Thin Films

Strain-induced Ferromagnetism Enhancement in Co:ZnO Films

Enhancement of electrical and ferromagnetic properties by additional Al doping in Co:ZnO thin films

Magnetic and Transport Properties of (mn, Co)-Codoped Zno Films Prepared by Radio-Frequency Magnetron Cosputtering

Magnetic Property and Spatial Occupation of Co Dopants in Zn<sub>0.98</sub>Co<sub>0.02</sub>O Nanowires

High-Tc ferromagnetism in a Co-doped ZnO system dominated by the formation of a zinc-blende type Co-rich ZnCoO phase.