Abstract:Diluted magnetic semiconductors (DMS), in which some atoms of host semiconductors are randomly substituted by magnetic atoms, are regarded as key materials for spintronics because they have charge and spin degrees of freedom in a single substance. ZnO is a potential candidate for applications of spintronics devices since its possibility for room temperature ferromagnetism and its intrinsic excellent electrical properties. ZnO is also suitable for fabricating carrier controllable ferromagnetism because carrier-controlling techniques for ZnO have been well established. And among the methods used for deposition of thin films, PLD is effective and has the advantage that the ratios of the elemental components of the bulk and film are almost the same, even for chemically complex systems. In this paper, Zn 0.95 Co 0.05 O thin films were prepared by pulse laser deposition(PLD) on silicon(100) and quartz substrates. By optimizing the growth conditions, the Co-doped ZnO thin films obtained at temperature of 700 9C and oxygen pressure of 0.02 Pa showed magnetism even at room temperature. The X-ray diffraction patterns suggested that the obtained films showed c axis orientation preference, and Co related phases such as Co 2O 3 didn't appear, simply indicating that Co ions had been successfully doped into ZnO crystal lattices. SEM images showed that the films have dense surfaces with small roughness. The obtained sample was measured to have a hole concentration of ∼10 18 cm -3, a mobility of 18.7 cm 2 · V -1 · s -1, and a resistivity of about 0.04 Ω · cm, maintaining semiconductivity. And the magnetization of the Co-doped ZnO film can be measured at 12 K, even at room temperature.

Room-Temperature Fabricated Zncoo Diluted Magnetic Semiconductors

Characterization of ZnO:Co particles prepared by hydrothermal method for room temperature magnetism

Fabrication and magnetic properties of co-doped ZnO thin films by pulsed laser deposition

Room-temperature Ferromagnetism in Co-doped ZnO Diluted Magnetic Semiconductor

The Magnetic Properties of Co-Doped Zno Diluted Magnetic Insulator Films Prepared by Direct Current Reactive Magnetron Co-Sputtering

Fabrication and Properties of Li-doped ZnCoO Diluted Magnetic Semiconductor Thin Films

Room-Temperature Ferromagnetism in Co-Doped Zno Fabricated by Coprecipitation Method

Growth Temperature Dependent Evolutions of Microstructural, Optical and Magnetic Properties of Zn0.75Co0.25O Films

Room Temperature Magnetism in Sputtered Co/sub X/zn/sub 1-X/o Films

Transition from Diluted Magnetic Insulator to Semiconductor in Co-Doped Zno Transparent Oxide

Room Temperature Magnetism in Sputtered (zn,co)o Films

Enhanced Room Temperature Ferromagnetism in Co-Doped Zno Mediated by Interstitial H

Magnetic and Transport Properties of (mn, Co)-Codoped Zno Films Prepared by Radio-Frequency Magnetron Cosputtering

Room-Temperature Ferromagnetic Znmno Thin Films Synthesized by Plasma Enhanced Chemical Vapour Deposition Method

Room-Temperature Ferromagnetism in Co-Doped Zno Bulk Induced by Hydrogenation

Magnetism of Co-Doped Zno Epitaxially Grown on A Zno Substrate

Intrinsic room temperature ferromagnetism in Co-implanted ZnO

Ferromagnetic Behavior and Magneto-Optical Properties of Semiconducting Co-Doped ZnO

Room temperature ferromagnetic and ultraviolet optical properties of Co-doped ZnO nanocluster films

Synthesis of Co‐Doped ZnO Nanofibers and Their Magnetic Properties

The Magnetic Mechanism of Zn0.93co0.07o Thin Films