Effects of growth temperature on Li–N dual-doped p-type ZnO thin films prepared by pulsed laser deposition

Y ZHANG,J LU,Z YE,H HE,L ZHU,B ZHAO,L WANG
DOI: https://doi.org/10.1016/j.apsusc.2007.08.008
IF: 6.7
2008-01-01
Applied Surface Science
Abstract:Li–N dual-doped p-type ZnO (ZnO:(Li,N)) thin films have been prepared by pulsed laser deposition. The introduction of Li and N was confirmed by secondary ion mass spectrometry measurements. The structural, electrical, and optical properties as a function of growth temperature were investigated in detail. The lowest room-temperature resistivity of 3.99Ωcm was achieved at the optimal temperature of 450°C, with a Hall mobility of 0.17cm2/Vs and hole concentration of 9.12×1018cm−3. The ZnO:(Li,N) films exhibited good crystal quality with a complete c-axis orientation, a high transmittance (about 90%) in the visible region, and a predominant UV emission at room temperature. The two-layer-structure p-ZnO:(Li,N)/n-ZnO homojunctions were fabricated on a sapphire substrate. The current–voltage characteristics exhibited the rectifying behavior of a typical p–n junction.
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