Abstract:Low-temperature epitaxy of ZnO films was carried out on both Si(00 1) and silica substrates by reactive e-beam evaporation. Growth temperature was varied between 100 degrees C and 450 degrees C. The optimal growth temperatures were between 200 degrees C and 300 degrees C for Si(00 1) substrates and 300 degrees C and 350 degrees C for silica, respectively. Structural and optical characteristics grown on both of Si and silica were compared by measurements of X-ray diffraction, Raman scattering and photoluminescence excitation (PLE) spectroscopy. X-ray diffraction showed the ZnO films grown both on Si(00 1) and silica substrates were all highly c-axis-oriented and their linewidth of (002) diffraction peak is significantly smaller than that measured from ZnO films deposited by magnetron sputtering. However, Raman scattering demonstrated the presence of excess zinc in the ZnO/silica structure. PLE measurements exhibited the sharp band-absorption edge and exciton absorption in the ZnO films on Si(00 1) and poor optical properties of ZnO on silica. PLE also revealed that the absorption characteristic near the band edge remarkably changed with the variation of oxygen content in the ZnO lattice while X-ray diffraction showed that the crystalline structures of ZnO films grown under different O-2 pressure almost remained unchanged. The underlying mechanism of low-temperature epitaxy of high-quality ZnO films and its applications in electronic and optoelectronic devices are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

Effects of Growth Temperature and Oxygen Pressure on the Properties of Heteroepitaxial Zno Thin Films on Sapphire (0001) Substrates by Pulsed Laser Deposition

Effect of Nucleation and Growth Kinetics on the Electrical and Optical Properties of Undoped ZnO Films

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

STRUCTURAL AND OPTICAL STUDIES OF ZnO FILMS GROWN AT LOW TEMPERATURE

Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

Effect of Reaction Temperature on Surface Morphology and Photoelectric Properties of ZnO Grown by Hydrothermal Method in Mixed Solvent

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Comparison of Structural and Optical Properties of ZnO Films Grown on Different Substrates at Low Temperatures

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Low-temperature epitaxy of ZnO films on Si(0 0 1) and silica by reactive e-beam evaporation

Epitaxial growth of non-polar m-plane ZnO thin films by pulsed laser deposition

The Growth and Annealing of Single Crystalline Zno Films by Low-Pressure Mocvd

Growth of Epitaxial C-Plane Zno Film on A-Plane Sapphire by Radio Frequency Reactive Magnetron Sputtering

Effect of Growth Temperature on A-Plane Zno Formation on R-Plane Sapphire

Effects of growth temperature on Li–N dual-doped p-type ZnO thin films prepared by pulsed laser deposition

Effects of Growth Temperature on Structural and Electrical Properties of Li-N-H Codoped Zno

Effect of oxygen pressure during the growth of ZnSnO3 epitaxial thin films on LiNbO3 substrates

Comparisons of Structural and Optical Properties of ZnO Films Grown on Sapphire and Si(001)

Structural and Optical Studies of Mg(X)Zn(1-X)Ofilms Grown on Sapphire

Growth of high-quality ZnO thin films on (11\bar{2}0) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy