Growth of high-quality ZnO thin films on (11\bar{2}0) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

ping ding,xinhua pan,zhizhen ye,haiping he,honghai zhang,wei chen,chongyu zhu,jingyun huang

DOI: https://doi.org/10.1007/s00339-012-7485-2

2013-01-01

Applied Physics A: Materials Science and Processing

Abstract:High-quality ZnO thin films were grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy. X-ray diffraction and transmission electron microscopy reveal that the ZnO films have high structural quality and an atomically sharp ZnO/Al2O3 interface. The full width at half maximum values of the 0002 and 303̄2 ZnO ω-rocking curves are 467.8 and 813.5 arc sec for a 600 nm thick ZnO film. A screw dislocation density of 4.35×108 cm-2 and an edge dislocation density of 3.38×109 cm-2 are estimated by X-ray diffraction. The surface of the ZnO epilayers contains hexagonal pits, which can be observed in the Zn-polar ZnO. The films have a resistivity of 0.119 Ω cm, an electron concentration of 6.85×1017 cm-3, and a mobility of 76.5 cm2 V-1 s-1 at room temperature. Low temperature photoluminescence measurements show good optical properties comparable to ZnO single crystals. © 2012 Springer-Verlag Berlin Heidelberg.