Growth of P-Type A-Plane Zno Thin Films on R-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

Ping Ding,Xinhua Pan,Jingyun Huang,Bin Lu,Honghai Zhang,Wei Chen,Zhizhen Ye
DOI: https://doi.org/10.1016/j.matlet.2011.12.030
IF: 3
2012-01-01
Materials Letters
Abstract:Non-polar ZnO thin films were grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The film is (112−0)oriented (a-plane) as identified by the X-ray diffraction pattern. Structural properties are anisotropic and surfaces of films show stripes running along the ZnO [0001] direction. The nonintentionally doped non-polar ZnO film exhibits weak p-type conductivity with a hole concentration of 1.33×1015cm−3, a Hall mobility of 18.7cm2 V−1s−1, and a resistivity of 251.5Ω·cm, respectively. Near-band-edge emission is dominant in room-temperature photoluminescence while deep level emission is negligible, indicating high optical quality of the p-type non-polar ZnO thin films.
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