Near Band Edge Photoluminescence Of Zno Nanowires: Optimization Via Surface Engineering
Danhua Yan,Wenrui Zhang,Jiajie Cen,Eli Stavitski,Jerzy T. Sadowski,Elio Vescovo,Andrew Walter,Klaus Attenkofer,Dario Stacchiola,Mingzhao Liu
DOI: https://doi.org/10.1063/1.5001043
IF: 4
2017-01-01
Applied Physics Letters
Abstract:Zinc oxide (ZnO) nanowire arrays have potential applications for various devices such as ultraviolet light emitting diodes and lasers, where photoluminescence of intense near band edge emission without defect emissions is usually desired. Here, we demonstrate, counter-intuitively, that the near band edge emission may become dominant by introducing certain surface defects to ZnO nanowires via surface engineering. Specifically, near band edge emission (NBE) is effectively enhanced after a low pressure O-2 plasma treatment that sputters off surface oxygen species to produce a reduced and oxygen vacancy-rich surface. The effect is attributed to the lowered surface valence band maximum of the reduced ZnO surface that creates an accumulative band bending, which screens the photo-generated minority carriers (holes) from reaching or being trapped by the surface defects. Published by AIP Publishing.