Surface-Plasmon-Mediated Emission Enhancement from Ag-Capped Zno Thin Films

Qiu Dong-Jiang,Fan Wen-Zhi,Weng Sheng,Wu Hui-Zhen,Wang Jun
DOI: https://doi.org/10.7498/aps.60.087301
IF: 0.906
2011-01-01
Acta Physica Sinica
Abstract:Ag/ZnO bilayer thin films are fabricated on Si substrates via two-step approach of ZnO sputtering + Ag evaporation. The enhancement of the near band edge (NBE) emission of the ZnO film is realized through coupling between the surface plasmon resonating energy at Ag/ZnO interface and the photonic energy of ZnO NBE emission. The dependence of the emission enhancement ratio of ZnO on the thickness and the growth temperature T of Ag cap-layers are investigated. By evaporating Ag(8 nm) cap-layer onto ZnO(100 nm) film at high substrate temperatures (T300 ℃), the value reaches about 18,i.e., 18, which is more than twice that of Ag(8 nm)/ZnO(100 nm) bilayer films grown at low temperatures (T200 ℃). It is found that the realization of the larger can be ascribed to the bigger surface roughness of Ag/ZnO bilayer samples prepared under higher growth temperatures.
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