Abstract:The growth of high-quality ZnO bulk crystals is an outstanding challenge, and the nature of grown-in defects in crystals is far from well understood. In this work, a specially designed low-temperature-gradient CVT growth system was developed based on finite element analysis. High-quality ZnO single crystals were successfully grown. The supersaturation front in the growth system was controlled, and internal stress in the crystal was reduced by introducing a radiation baffle and a special seed pedestal. The structural, electrical, and optical properties of ZnO crystals were studied before and after oxygen annealing. The scanning electron microscope (SEM) and optical microscope (OM) results indicate the stable growth is achieved under the Zn-rich growth condition. The X-ray rocking curve measurements reveal the high crystalline quality of the grown crystal with the full-width at half-maximum (FWHM) value of 17 arcsec for the (004) reflection. The time-of-flight secondary ion mass spectroscopy (ToF-SIMS) results prove the high purity of grown crystals and reveal the variations of trace impurity concentrations in crystals. When annealed in oxygen at 1000 °C, the optical band gap (Eg) changes from 2.50 eV to 3.15 eV. The Raman analysis indicates that oxygen vacancies (Vo) in the as-grown crystal disappear after annealing. The Hall measurements show that the room temperature (RT) mobilities before and after annealing are 197 cm2V−1c−1 and 207 cm2V−1c−1, respectively. The RT carrier concentration decreases by about two orders of magnitude to 5.45 × 1015 cm−3, while the RT resistivity increases by about one order of magnitude to 5.57 Ω cm after annealing. The positron annihilation lifetimes (PALS) results prove the presence of Zn vacancies (Vzn) after annealing. The origins of as-grown ZnO green luminescence (GL) and the temperature-dependent blue shifts of the GL peak positions are explained based on Zni and Vo defects. The fine structures of annealed ZnO GL are found to be related to Vzn native defects rather than Cu impurity.

The Growth and Annealing of Single Crystalline Zno Films by Low-Pressure Mocvd

Effect of Nucleation and Growth Kinetics on the Electrical and Optical Properties of Undoped ZnO Films

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Preparation and Characterization of Na-doped ZnO Thin Films by Sol–gel Method

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

STRUCTURAL AND OPTICAL STUDIES OF ZnO FILMS GROWN AT LOW TEMPERATURE

Annealing Effect on Properties of Zno Thin Films Grown on LiNbO3 Substrates by MOCVD

Mocvd Growth and Properties of Zno Films Using Dimethylzinc and Oxygen

Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD

Crystal growth, finite element analysis and oxygen annealing of ZnO bulk crystal grown by low-temperature-gradient chemical vapor transport

Effect of Post-Thermal Annealing on Properties of Zno Thin Film Grown on C-Al(2)O(3)By Metal-Organic Chemical Vapor Deposition

Influence of Annealing on Optical Properties of ZnO Film

Effects of Post-Annealing Treatment on the Structural and Optical Properties of Cubic Mg Chi Zn1-Chi O Thin Films Grown on Sapphire

Influence Of Unintentional Doped Carbon On Growth And Properties Of N-Doped Zno Films

Influences of Annealing on the Opto-electronic Properties of ZnO Films Grown by Plasma-Enhanced MOCVD

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Effects of Growth Temperature and Oxygen Pressure on the Properties of Heteroepitaxial Zno Thin Films on Sapphire (0001) Substrates by Pulsed Laser Deposition

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Production Of High-Quality Zno Films By The Two-Step Annealing Method

Study on the annealed ZnO films grown by plasma-assisted MOCVD

Influences of Substrate and Annealing on the Structural and Optical Properties and Photoluminescence of Nanocrystalline Zno Films Prepared by Plasma Assisted Pulsed Laser Deposition