Abstract:The growth of ZnO film by plasma-assisted MOCVD was reported in this atricle. From X-ray diffraction spectrum, the intensity of (0002) peak at 2theta=34.56degrees was high, indicating a c-axis orientation perpendicular to the substrate surface in ZnO. Ultraviolet(UV) emission with a high intensity at 375 nm was attributed to the excitation emission from photoluminescence(PL) spectrum. In PL spectrum, we also found green emission with a low intensity and wide FWHM. This green emission came from deep level transition due to defect levels in ZnO film. The ratio of the intensity of UV emission to that of green emission was as high as 193, indicating a high quality of the samples. This high quality was also confirmed by Atomic Force Microscope(AFM) analysis. Two methods were used in order to get ZnO film with a high resistivity. One was annealing ZnO film every ten minutes under relative high pressure of oxygen(O-2) at 700 degreesC, the other was N-doping by N-2. ZnO film with a high resistivity was successfully prepared. The resistivity was 5 x 10(4) Omega . cm and 1100 Omega . cm, respectively, while that of untreated sample was as low as 0.65 Omega . cm. Furthermore, N-doped sample had a higher resistivity and better photoluminescence properties than that of the sample obtained by annealing under oxygen.

Study on the annealed ZnO films grown by plasma-assisted MOCVD

The growth of nanoscale ZnO films by pulsed-spray evaporation chemical vapor deposition and their structural, electric and optical properties

Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD

Influences of Annealing on the Opto-electronic Properties of ZnO Films Grown by Plasma-Enhanced MOCVD

Effect of Annealing Temperature and CuO on Microstructure and Optical Band Gap of CuxZn1−xO Thin Films

Growth of ZnO Film by Plasma-assisted MOCVD

Enhanced Visible Light Response of ZnO Porous Thin Film by Post-Annealing Treatment

Characteristics of Zno Film Grown by Mocvd

The deposition and annealing study of MOCVD ZnMgO

Effects of Post-Annealing Treatment on the Structural and Optical Properties of Cubic Mg Chi Zn1-Chi O Thin Films Grown on Sapphire

Influence of Annealing on Optical Properties of ZnO Film

Annealing Effect on Properties of Zno Thin Films Grown on LiNbO3 Substrates by MOCVD

The Growth and Annealing of Single Crystalline Zno Films by Low-Pressure Mocvd

Effects of Sapphire Substrate Annealing on ZnO Epitaxial Films Grown by MOCVD

Mocvd Growth and Properties of Zno Films Using Dimethylzinc and Oxygen

Optical Properties of ZnO Film by Plasma-Assisted MOCVD

ZnO Thin Film Prepared by Low Pressure MOCVD Method

Growth of high-quality ZnO thin films on (11\bar{2}0) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition

STRUCTURAL AND OPTICAL STUDIES OF ZnO FILMS GROWN AT LOW TEMPERATURE

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation