ZnO Thin Film Prepared by Low Pressure MOCVD Method

叶建东,顾书林,朱顺明,胡立群,陈童,秦峰,张荣,施毅,沈波,江若琏,郑有炓
DOI: https://doi.org/10.3969/j.issn.1000-3819.2002.04.012
2002-01-01
Abstract:High quality c axis oriented single crystal ZnO films have been successfully grown on the (0002) sapphire substrates by Low Pressure MOCVD using Zn(C 2H 5) 2 and CO 2 as sources.The crystallinity and the orientation of the films were studied by X ray diffraction technique.The lattice constant for the ZnO film on the sapphire substrate is 0.5218 nm,which is a bit higher than the reported value in ZnO film.The optical band gap is about 3.245 eV by simulating the data of the absorption spectrum.The edge emission band has been observed obviously in the PL spectrum and the origin of the blue emission band has been also revealed and discussed.
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