Abstract:Low-temperature epitaxy of ZnO films was carried out on both Si(00 1) and silica substrates by reactive e-beam evaporation. Growth temperature was varied between 100 degrees C and 450 degrees C. The optimal growth temperatures were between 200 degrees C and 300 degrees C for Si(00 1) substrates and 300 degrees C and 350 degrees C for silica, respectively. Structural and optical characteristics grown on both of Si and silica were compared by measurements of X-ray diffraction, Raman scattering and photoluminescence excitation (PLE) spectroscopy. X-ray diffraction showed the ZnO films grown both on Si(00 1) and silica substrates were all highly c-axis-oriented and their linewidth of (002) diffraction peak is significantly smaller than that measured from ZnO films deposited by magnetron sputtering. However, Raman scattering demonstrated the presence of excess zinc in the ZnO/silica structure. PLE measurements exhibited the sharp band-absorption edge and exciton absorption in the ZnO films on Si(00 1) and poor optical properties of ZnO on silica. PLE also revealed that the absorption characteristic near the band edge remarkably changed with the variation of oxygen content in the ZnO lattice while X-ray diffraction showed that the crystalline structures of ZnO films grown under different O-2 pressure almost remained unchanged. The underlying mechanism of low-temperature epitaxy of high-quality ZnO films and its applications in electronic and optoelectronic devices are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

Low-temperature hydrothermal growth of oriented [0001] ZnO film

Conversion of large-scale oriented ZnO rod array into nanotube array under hydrothermal etching condition via one-step synthesis approach

Hydrothermal Synthesis of Well-Aligned ZnO Nanorod Arrays on Silicon

STRUCTURAL AND OPTICAL STUDIES OF ZnO FILMS GROWN AT LOW TEMPERATURE

Alignment-controlled Hydrothermal Growth of Well-Aligned ZnO Nanorod Arrays

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates

Low temperature growth and properties of ZnO nanorod arrays

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

Low-temperature epitaxy of ZnO films on Si(0 0 1) and silica by reactive e-beam evaporation

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Oriented growth of ZnO nanostructures on Si and Al substrates

Low-temperature growth of uniform ZnO particles with controllable ellipsoidal morphologies and characteristic luminescence patterns.

Low‐Temperature Growth of P‐type ZnO Thin Films Via Plasma‐Assisted MOCVD

Preferential growth of ZnO thin films by the atomic layer deposition technique

Comparison of Structural and Optical Properties of ZnO Films Grown on Different Substrates at Low Temperatures

Forming Extremely Smooth Zno Thin Film on Silicon Substrates for Growth of Large and Well-Aligned Zno Rods with the Hydrothermal Method

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Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Growth of high-quality ZnO thin films on (11\bar{2}0) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method